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公开(公告)号：US07689946B2
公开(公告)日：2010-03-30
申请号：US11550818
申请日：2006-10-19
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F17/5036
摘要： A fast FET and a method and system for designing the fast FET. The method includes: selecting a reference design for a field effect transistor, the field effect transistor including a source, a drain, a channel between the source and drain, a gate electrode over the channel, at least one source contact to the source and at least one contact to the drain, the at least one source contact spaced a first distance from the gate electrode and the at least one drain contact spaced a second distance from the gate electrode; and adjusting the first distance and the second distance to maximize a performance parameter of the field effect transistor to create a fast design for the field effect transistor.
摘要翻译： 一种快速FET，以及用于设计快速FET的方法和系统。 该方法包括：选择场效应晶体管的参考设计，场效应晶体管包括源极，漏极，源极和漏极之间的沟道，沟道上的栅电极，至少一个源极和源极 所述至少一个源极接触件与所述栅电极隔开第一距离，所述至少一个漏极接触件与所述栅电极间隔开第二距离; 并且调整第一距离和第二距离以最大化场效应晶体管的性能参数以产生用于场效应晶体管的快速设计。
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公开(公告)号：US20080109770A1
公开(公告)日：2008-05-08
申请号：US11550818
申请日：2006-10-19
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F17/5036
摘要： A fast FET and a method and system for designing the fast FET. The method includes: selecting a reference design for a field effect transistor, the field effect transistor including a source, a drain, a channel between the source and drain, a gate electrode over the channel, at least one source contact to the source and at least one contact to the drain, the at least one source contact spaced a first distance from the gate electrode and the at least one drain contact spaced a second distance from the gate electrode; and adjusting the first distance and the second distance to maximize a performance parameter of the field effect transistor to create a fast design for the field effect transistor.
摘要翻译： 一种快速FET，以及用于设计快速FET的方法和系统。 该方法包括：选择场效应晶体管的参考设计，场效应晶体管包括源极，漏极，源极和漏极之间的沟道，沟道上的栅电极，至少一个源极和源极 所述至少一个源极接触件与所述栅电极隔开第一距离，所述至少一个漏极接触件与所述栅电极间隔开第二距离; 并且调整第一距离和第二距离以最大化场效应晶体管的性能参数以产生用于场效应晶体管的快速设计。
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公开(公告)号：US07791160B2
公开(公告)日：2010-09-07
申请号：US11923919
申请日：2007-10-25
IPC分类号： H01L29/786
CPC分类号： H01L27/0207 , H01L21/84 , H01L29/4238
摘要： A fast FET, a method and system for designing the fast FET and a design structure of the fast FET. The method includes: selecting a reference design for a field effect transistor, the field effect transistor including a source, a drain, a channel between the source and drain, a gate electrode over the channel, at least one source contact to the source and at least one contact to the drain, the at least one source contact spaced a first distance from the gate electrode and the at least one drain contact spaced a second distance from the gate electrode; and adjusting the first distance and the second distance to maximize a performance parameter of the field effect transistor to create a fast design for the field effect transistor.
摘要翻译： 一种用于设计快速FET的快速FET，方法和系统以及快速FET的设计结构。 该方法包括：选择场效应晶体管的参考设计，场效应晶体管包括源极，漏极，源极和漏极之间的沟道，沟道上的栅电极，至少一个源极和源极 所述至少一个源极接触件与所述栅电极隔开第一距离，所述至少一个漏极接触件与所述栅电极间隔开第二距离; 并且调整第一距离和第二距离以最大化场效应晶体管的性能参数以产生用于场效应晶体管的快速设计。
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公开(公告)号：US20090108349A1
公开(公告)日：2009-04-30
申请号：US11923919
申请日：2007-10-25
IPC分类号： H01L29/786
CPC分类号： H01L27/0207 , H01L21/84 , H01L29/4238
摘要： A fast FET, a method and system for designing the fast FET and a design structure of the fast FET. The method includes: selecting a reference design for a field effect transistor, the field effect transistor including a source, a drain, a channel between the source and drain, a gate electrode over the channel, at least one source contact to the source and at least one contact to the drain, the at least one source contact spaced a first distance from the gate electrode and the at least one drain contact spaced a second distance from the gate electrode; and adjusting the first distance and the second distance to maximize a performance parameter of the field effect transistor to create a fast design for the field effect transistor.
摘要翻译： 一种用于设计快速FET的快速FET，方法和系统以及快速FET的设计结构。 该方法包括：选择场效应晶体管的参考设计，场效应晶体管包括源极，漏极，源极和漏极之间的沟道，沟道上的栅电极，至少一个源极和源极 所述至少一个源极接触件与所述栅电极隔开第一距离，所述至少一个漏极接触件与所述栅电极间隔开第二距离; 并且调整第一距离和第二距离以最大化场效应晶体管的性能参数以产生用于场效应晶体管的快速设计。
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