发明申请
- 专利标题： Capacitance structure of a semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体器件的电容结构及其制造方法
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申请号： US11598391申请日： 2006-11-13
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公开(公告)号： US20080111212A1公开(公告)日： 2008-05-15
- 发明人: Hsiao-Che Wu
- 申请人： Hsiao-Che Wu
- 申请人地址： TW Hsinchu
- 专利权人： Promos Technologies Inc.
- 当前专利权人： Promos Technologies Inc.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L27/00
- IPC分类号： H01L27/00 ; H01L21/77
摘要：
A capacitance structure of a semiconductor device and a method for manufacturing the structure are provided. The capacitance structure comprises a plurality of capacitance elements and a plurality of supports. Each of the capacitance elements has a column, and each of the supports is disposed between two adjacent columns by partially connecting onto the outer surface of each of the two adjacent columns. Thereby, the mechanical properties of the capacitance structure can be enhanced.
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