发明申请
- 专利标题： SEMICONDUCTOR DEVICE MANUFACTURED USING AN ELECTROCHEMICAL DEPOSITION PROCESS FOR COPPER INTERCONNECTS
- 专利标题（中）： 使用电化学沉积工艺制造的半导体器件用于铜互连
-
申请号： US11559495申请日： 2006-11-14
-
公开(公告)号： US20080111237A1公开(公告)日： 2008-05-15
- 发明人: Montray Cantrell Leavy , Jeffrey Alan West , Kyle James McPherson , Richard Allen Faust , Lixin Wu
- 申请人： Montray Cantrell Leavy , Jeffrey Alan West , Kyle James McPherson , Richard Allen Faust , Lixin Wu
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/4763
摘要：
A method of manufacturing a semiconductor device that comprises forming an insulating layer over a semiconductive substrate 110 and forming a copper interconnect. Forming the interconnect includes etching an interconnect opening in the insulating layer and filling the opening with copper plating. Filling with copper plating includes using a first and second ECD. An electrolyte solution of the first and second ECD contains organic additives, and a current of the first ECD is greater than a current of the second ECD.
信息查询
IPC分类:
