A memory cell is constructed by connecting in series a variable-resistance element having a resistance which is varied by application of a positive voltage to one terminal (first node) thereof using a potential at the other terminal thereof as a reference and a diode which allows a current to flow therethrough by application of a positive voltage to the other terminal thereof using a potential at one terminal (second node) thereof as a reference. The first node is connected to the corresponding column select line and the second node is connected to the corresponding row select line. Then, to a non-selected row select line, a potential higher than when the row select line is selected is applied by using a row control circuit. By using column-select-line driver circuits, predetermined potentials corresponding to a non-selection period, a data write period, a reset period, and a data read period are applied to the column select line.