Embodiments herein present a device, method, etc. for a dual-plane complementary metal oxide semiconductor. The device comprises a fin-type transistor on a bulk silicon substrate. The fin-type transistor comprises outer fin regions and a center semiconductor fin region, wherein the center fin region has a {110} crystalline oriented channel surface. The outer fin regions comprise a strain inducing impurity that stresses the center semiconductor fin region. The strain inducing impurity contacts the bulk silicon substrate, wherein the strain inducing impurity comprises germanium and/or carbon. Further, the fin-type transistor comprises a thick oxide member on a top face thereof. The fin-type transistor also comprises a first transistor on a first crystalline oriented surface, wherein the device further comprises a second transistor on a second crystalline oriented surface that differs from the first crystalline oriented surface.