发明申请
- 专利标题: Variable resurf semiconductor device and method
- 专利标题(中): 可变复用半导体器件及方法
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申请号: US11601127申请日: 2006-11-15
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公开(公告)号: US20080113498A1公开(公告)日: 2008-05-15
- 发明人: Vishnu K. Khemka , Amitava Bose , Todd C. Roggenbauer , Ronghua Zhu
- 申请人: Vishnu K. Khemka , Amitava Bose , Todd C. Roggenbauer , Ronghua Zhu
- 主分类号: H01L21/04
- IPC分类号: H01L21/04
摘要:
Methods and apparatus are provided for semiconductor device (60, 95, 100, 106). The semiconductor device (60, 95, 100, 106), comprises a first region (64, 70) of a first conductivity type extending to a first surface (80), a second region (66) of a second, opposite, conductivity type forming with the first region (70) a first PN junction (65) extending to the first surface (80), a contact region (68) of the second conductivity type in the second region (66) at the first surface (80) and spaced apart from the first PN junction (65) by a first distance (LDS), and a third region (82, 96-98, 108) of the first conductivity type and of a second length (LBR), underlying the second region (66) and forming a second PN junction (63) therewith spaced apart from the first surface (80) and located closer to the first PN junction (65) than to the contact region (68). The breakdown voltage is enhanced without degrading other useful properties of the device (60, 95, 100, 106).
公开/授权文献
- US07763937B2 Variable resurf semiconductor device and method 公开/授权日:2010-07-27