- 专利标题: Substrate contact for a MEMS device
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申请号: US11941057申请日: 2007-11-15
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公开(公告)号: US20080119003A1公开(公告)日: 2008-05-22
- 发明人: Charles Grosjean , Paul Merritt Hagelin , Nicholas Ian Buchan
- 申请人: Charles Grosjean , Paul Merritt Hagelin , Nicholas Ian Buchan
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
One embodiment of the present invention sets forth a substrate contact for a MEMS device die, where the substrate contact is formed through an electrically insulative layer in the device die that is positioned between a handle wafer layer and a MEMS device layer formed on the handle wafer layer. The substrate contact serves as a path to ground for the MEMS handle wafer layer and is formed during the fabrication process of the MEMS device. One advantage of the disclosed invention is that a robust, low-impedance path to ground is provided for the MEMS handle wafer layer, with minimal impact on the process of fabricating a MEMS device.
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