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公开(公告)号：US20080116534A1
公开(公告)日：2008-05-22
申请号：US11941053
申请日：2007-11-15
IPC分类号： H01L29/84
CPC分类号： B81C1/00301 , B81B2207/092
摘要： One embodiment of the present invention sets forth a substrate contact for a MEMS device die, where the substrate contact is formed through an electrically insulative layer in the device die that is positioned between a handle wafer layer and a MEMS device layer formed on the handle wafer layer. The substrate contact serves as a path to ground for the MEMS handle wafer layer and is formed during the fabrication process of the MEMS device. One advantage of the disclosed invention is that a robust, low-impedance path to ground is provided for the MEMS handle wafer layer, with minimal impact on the process of fabricating a MEMS device.
摘要翻译： 本发明的一个实施例提出了用于MEMS器件裸片的衬底接触，其中衬底接触通过器件管芯中的电绝缘层形成，该电绝缘层位于处理晶片层和形成在处理晶片上的MEMS器件层之间 层。 衬底接触件用作MEMS处理晶片层的接地路径，并且在MEMS器件的制造过程期间形成。 所公开的发明的一个优点是为MEMS处理晶片层提供了坚固的，低阻抗的接地路径，对制造MEMS器件的过程的影响最小。
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公开(公告)号：US20080119003A1
公开(公告)日：2008-05-22
申请号：US11941057
申请日：2007-11-15
IPC分类号： H01L21/00
CPC分类号： B81C1/00095
摘要： One embodiment of the present invention sets forth a substrate contact for a MEMS device die, where the substrate contact is formed through an electrically insulative layer in the device die that is positioned between a handle wafer layer and a MEMS device layer formed on the handle wafer layer. The substrate contact serves as a path to ground for the MEMS handle wafer layer and is formed during the fabrication process of the MEMS device. One advantage of the disclosed invention is that a robust, low-impedance path to ground is provided for the MEMS handle wafer layer, with minimal impact on the process of fabricating a MEMS device.
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公开(公告)号：US20080119001A1
公开(公告)日：2008-05-22
申请号：US11941045
申请日：2007-11-15
IPC分类号： H01L21/00
CPC分类号： B81C1/00095
摘要： One embodiment of the present invention sets forth a substrate contact for a MEMS device die, where the substrate contact is formed through an electrically insulative layer in the device die that is positioned between a handle wafer layer and a MEMS device layer formed on the handle wafer layer. The substrate contact serves as a path to ground for the MEMS handle wafer layer and is formed during the fabrication process of the MEMS device. One advantage of the disclosed invention is that a robust, low-impedance path to ground is provided for the MEMS handle wafer layer, with minimal impact on the process of fabricating a MEMS device.
摘要翻译： 本发明的一个实施例提出了用于MEMS器件裸片的衬底接触，其中衬底接触通过器件管芯中的电绝缘层形成，该电绝缘层位于处理晶片层和形成在处理晶片上的MEMS器件层之间 层。 衬底接触件用作MEMS处理晶片层的接地路径，并且在MEMS器件的制造过程期间形成。 所公开的发明的一个优点是为MEMS处理晶片层提供了坚固的，低阻抗的接地路径，对制造MEMS器件的过程的影响最小。
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公开(公告)号：US20080119002A1
公开(公告)日：2008-05-22
申请号：US11941056
申请日：2007-11-15
IPC分类号： H01L21/00
CPC分类号： B81C1/00095
摘要： One embodiment of the present invention sets forth a substrate contact for a MEMS device die, where the substrate contact is formed through an electrically insulative layer in the device die that is positioned between a handle wafer layer and a MEMS device layer formed on the handle wafer layer. The substrate contact serves as a path to ground for the MEMS handle wafer layer and is formed during the fabrication process of the MEMS device. One advantage of the disclosed invention is that a robust, low-impedance path to ground is provided for the MEMS handle wafer layer, with minimal impact on the process of fabricating a MEMS device.
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5.发明授权公开(公告)号：US08667665B2
公开(公告)日：2014-03-11
申请号：US13562684
申请日：2012-07-31
IPC分类号： H04R31/00
CPC分类号： H03H9/02448 , H01L41/22 , H01L41/253 , H02N1/00 , H03B5/30 , H03B5/32 , H03H3/0072 , H03H3/0073 , H03H3/0076 , H03H9/02244 , H03H9/02433 , H03H9/125 , H03H9/21 , H03H9/2405 , H03H9/2468 , H03H9/2484 , H03H2009/02251 , H03H2009/02283 , H03H2009/02291 , H03H2009/02299 , H03H2009/02322 , H03H2009/0233 , H03H2009/02496 , H03H2009/155 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , Y10T29/4902 , Y10T29/4908
摘要： One embodiment of the present inventions sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with a compensating material (for example, an oxide) wherein the temperature coefficient of Young's Modulus (TCE) of the compensating material has a sign opposite to a TCE of the material of the resonating element.
摘要翻译： 本发明的一个实施例提出了降低MEMS谐振器的频率（TCF）的温度系数的方法。 该方法包括光刻地限定MEMS谐振器光束中的狭缝并用补偿材料（例如，氧化物）填充槽，其中补偿材料的杨氏模量（TCE）的温度系数具有与材料的TCE相反的符号 的谐振元件。
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公开(公告)号：US20120295384A1
公开(公告)日：2012-11-22
申请号：US13562684
申请日：2012-07-31
IPC分类号： H01L21/02
CPC分类号： H03H9/02448 , H01L41/22 , H01L41/253 , H02N1/00 , H03B5/30 , H03B5/32 , H03H3/0072 , H03H3/0073 , H03H3/0076 , H03H9/02244 , H03H9/02433 , H03H9/125 , H03H9/21 , H03H9/2405 , H03H9/2468 , H03H9/2484 , H03H2009/02251 , H03H2009/02283 , H03H2009/02291 , H03H2009/02299 , H03H2009/02322 , H03H2009/0233 , H03H2009/02496 , H03H2009/155 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , Y10T29/4902 , Y10T29/4908
摘要： One embodiment of the present inventions sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with a compensating material (for example, an oxide) wherein the temperature coefficient of Young's Modulus (TCE) of the compensating material has a sign opposite to a TCE of the material of the resonating element.
摘要翻译： 本发明的一个实施例提出了降低MEMS谐振器的频率（TCF）的温度系数的方法。 该方法包括光刻地限定MEMS谐振器光束中的狭缝并用补偿材料（例如，氧化物）填充槽，其中补偿材料的杨氏模量（TCE）的温度系数具有与材料的TCE相反的符号 的谐振元件。
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7.发明授权公开(公告)号：US08234774B2
公开(公告)日：2012-08-07
申请号：US11963709
申请日：2007-12-21
IPC分类号： H04R31/00
CPC分类号： H03H9/02448 , H01L41/22 , H01L41/253 , H02N1/00 , H03B5/30 , H03B5/32 , H03H3/0072 , H03H3/0073 , H03H3/0076 , H03H9/02244 , H03H9/02433 , H03H9/125 , H03H9/21 , H03H9/2405 , H03H9/2468 , H03H9/2484 , H03H2009/02251 , H03H2009/02283 , H03H2009/02291 , H03H2009/02299 , H03H2009/02322 , H03H2009/0233 , H03H2009/02496 , H03H2009/155 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , Y10T29/4902 , Y10T29/4908
摘要： One embodiment of the present invention sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with oxide. By growing oxide within the slots, the amount of oxide growth on the outside surfaces of the MEMS resonator may be reduced. Furthermore, by situating the slots in the areas of large flexural stresses, the contribution of the embedded oxide to the overall TCF of the MEMS resonator is increased, and the total amount of oxide needed to decrease the overall TCF of the MEMS resonator to a particular target value is reduced. As a result, the TCF of the MEMS resonator may be reduced in a manner that is more effective relative to prior art approaches.
摘要翻译： 本发明的一个实施例提出了降低MEMS谐振器的频率（TCF）的温度系数的方法。 该方法包括光刻地限定MEMS谐振器束中的槽并用氧化物填充槽。 通过在槽内生长氧化物，可以减小MEMS谐振器的外表面上的氧化物生长量。 此外，通过将槽定位在大的弯曲应力的区域中，嵌入的氧化物对MEMS谐振器的整体TCF的贡献增加，并且将MEMS谐振器的整体TCF降低到特定的氧化物所需的氧化物总量 目标值降低。 结果，可以以相对于现有技术方法更有效的方式来减小MEMS谐振器的TCF。
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公开(公告)号：US20090160581A1
公开(公告)日：2009-06-25
申请号：US11963715
申请日：2007-12-21
IPC分类号： H03H9/24
CPC分类号： H03H3/0076 , H03H9/2468
摘要： One embodiment of the present invention sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with oxide. By growing oxide within the slots, the amount of oxide growth on the outside surfaces of the MEMS resonator may be reduced. Furthermore, by situating the slots in the areas of large flexural stresses, the contribution of the embedded oxide to the overall TCF of the MEMS resonator is increased, and the total amount of oxide needed to decrease the overall TCF of the MEMS resonator to a particular target value is reduced. As a result, the TCF of the MEMS resonator may be reduced in a manner that is more effective relative to prior art approaches.
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公开(公告)号：US20090158566A1
公开(公告)日：2009-06-25
申请号：US11963709
申请日：2007-12-21
IPC分类号： H01L41/22
CPC分类号： H03H9/02448 , H01L41/22 , H01L41/253 , H02N1/00 , H03B5/30 , H03B5/32 , H03H3/0072 , H03H3/0073 , H03H3/0076 , H03H9/02244 , H03H9/02433 , H03H9/125 , H03H9/21 , H03H9/2405 , H03H9/2468 , H03H9/2484 , H03H2009/02251 , H03H2009/02283 , H03H2009/02291 , H03H2009/02299 , H03H2009/02322 , H03H2009/0233 , H03H2009/02496 , H03H2009/155 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , Y10T29/4902 , Y10T29/4908
摘要： One embodiment of the present invention sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with oxide. By growing oxide within the slots, the amount of oxide growth on the outside surfaces of the MEMS resonator may be reduced. Furthermore, by situating the slots in the areas of large flexural stresses, the contribution of the embedded oxide to the overall TCF of the MEMS resonator is increased, and the total amount of oxide needed to decrease the overall TCF of the MEMS resonator to a particular target value is reduced. As a result, the TCF of the MEMS resonator may be reduced in a manner that is more effective relative to prior art approaches.
摘要翻译： 本发明的一个实施例提出了降低MEMS谐振器的频率（TCF）的温度系数的方法。 该方法包括光刻地限定MEMS谐振器束中的槽并用氧化物填充槽。 通过在槽内生长氧化物，可以减小MEMS谐振器的外表面上的氧化物生长量。 此外，通过将槽定位在大的弯曲应力的区域中，嵌入的氧化物对MEMS谐振器的整体TCF的贡献增加，并且将MEMS谐振器的整体TCF降低到特定的氧化物所需的氧化物总量 目标值降低。 结果，可以以相对于现有技术方法更有效的方式来减小MEMS谐振器的TCF。
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公开(公告)号：US06598985B2
公开(公告)日：2003-07-29
申请号：US10122885
申请日：2002-04-15
IPC分类号： G02B7182
CPC分类号： G02B26/0841
摘要： An optical mirror system with multi-axis rotational control is disclosed. The mirror system includes an optical surface assembly, and at least one leg assembly coupled to the optical surface assembly. The at least one leg assembly supports the optical surface above a substrate. A system and method in accordance with the present invention can operate with many different actuator mechanisms, including but not limited to, electrostatic, thermal, piezoelectric, and magnetic. An optical mirror system in accordance with the present invention accommodates large mirrors and rotation angles. Scanning mirrors can be made with this technique using standard surface-micromachining processes, or a deep RIE etch process. A device in accordance with the present invention meets the requirements for a directly scalable, high port count optical switch, utilizing a two mirror per optical I/O port configuration. An optical mirror in accordance with the present invention can be utilized in, but is not limited to, the following applications: optical add-drop multiplexers, wavelength routers, free-space optical interconnects, chip-level optical I/O, optical scanning displays, optical scanner (bar-codes, micro cameras), optical storage read/write heads, laser printers, medical replacement for glasses (incorporated with adaptive optics), medical diagnostic equipment, optical scanning for security applications.
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