发明申请
US20080121277A1 HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM CHALCOGENIDE MICROFLAKE PARTICLES
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来自CHALCOGENIDE MICROFLAKE颗粒的半导体前驱层的高通量印刷
- 专利标题: HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM CHALCOGENIDE MICROFLAKE PARTICLES
- 专利标题(中): 来自CHALCOGENIDE MICROFLAKE颗粒的半导体前驱层的高通量印刷
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申请号: US11765436申请日: 2007-06-19
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公开(公告)号: US20080121277A1公开(公告)日: 2008-05-29
- 发明人: Matthew R. Robinson , Jeroen K. J. Van Duren , Brian M. Sager
- 申请人: Matthew R. Robinson , Jeroen K. J. Van Duren , Brian M. Sager
- 主分类号: H01L31/18
- IPC分类号: H01L31/18
摘要:
Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes is particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
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