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    High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
    1.
    发明授权
    High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles 失效
    来自硫属元素纳米片的半导体前体层的高通量印刷

    公开(公告)号：US08372734B2

    公开(公告)日：2013-02-12

    申请号：US11765422

    申请日：2007-06-19

    申请人： Jeroen K. J. Van Duren ,  Matthew R. Robinson ,  Brian M. Sager

    发明人： Jeroen K. J. Van Duren ,  Matthew R. Robinson ,  Brian M. Sager

    IPC分类号： H01L21/20 ,  B05D5/12

    CPC分类号： B22F9/04 ,  B22F1/0055 ,  B22F2001/0033 ,  B22F2999/00 ,  C22C1/0491 ,  C23C18/08 ,  C23C18/1204 ,  C23C18/1275 ,  C23C18/1287 ,  H01L31/0322 ,  H01L31/06 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  B22F2202/03

    摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.

    摘要翻译： 提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在选择性力沉降之后。 特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。 这些平面颗粒可以是具有高纵横比的纳米片。 由纳米片形成的致密膜特别适用于形成光电器件。 在一个实施方案中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片（微花纹或纳米薄片）。

    High-throughput printing of semiconductor precursor layer from microflake particles
    2.
    发明授权
    High-throughput printing of semiconductor precursor layer from microflake particles 有权
    从微片颗粒高通量印制半导体前体层

    公开(公告)号：US08846141B1

    公开(公告)日：2014-09-30

    申请号：US12175945

    申请日：2008-07-18

    申请人： Matthew R. Robinson ,  Jeroen K. J. Van Duren ,  Craig Leidholm ,  Brian M. Sager

    发明人： Matthew R. Robinson ,  Jeroen K. J. Van Duren ,  Craig Leidholm ,  Brian M. Sager

    IPC分类号： B05D3/00

    CPC分类号： H01L31/0322 ,  H01L31/06 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    摘要： Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.

    摘要翻译： 提供了用于从微片微粒高通量印刷半导体前体层的方法和装置。 在一个实施方案中，该方法包括在合适的条件下，在合适的载体中转化非平面或平面前体材料，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在沉降之后。 特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。 这些平面颗粒可以是具有高纵横比的微片。 由微片形成的所得致密膜在形成光伏器件中特别有用。

    HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM CHALCOGENIDE PARTICLES
    4.
    发明申请
    HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM CHALCOGENIDE PARTICLES 审中-公开
    从CHALCOGENIDE颗粒的半导体前驱层的高通量印刷

    公开(公告)号：US20080124831A1

    公开(公告)日：2008-05-29

    申请号：US11765407

    申请日：2007-06-19

    申请人： Matthew R. Robinson ,  Jeroen K. J. Van Duren ,  Craig Leidholm ,  Brian M. Sager

    发明人： Matthew R. Robinson ,  Jeroen K. J. Van Duren ,  Craig Leidholm ,  Brian M. Sager

    IPC分类号： H01L31/18

    CPC分类号： C23C18/14 ,  C23C18/1229 ,  C23C18/127 ,  C23C18/1279 ,  C23C18/1283 ,  H01L31/0322 ,  H01L31/06 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541

    摘要： Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.

    摘要翻译： 提供了用于从微片微粒高通量印刷半导体前体层的方法和装置。 在一个实施方案中，该方法包括在合适的条件下，在合适的载体中转化非平面或平面前体材料，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在沉降之后。 特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。 这些平面颗粒可以是具有高纵横比的微片。 由微片形成的所得致密膜在形成光伏器件中特别有用。

    HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM CHALCOGENIDE NANOFLAKE PARTICLES
    7.
    发明申请
    HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM CHALCOGENIDE NANOFLAKE PARTICLES 失效
    来自CHALCOGENIDE NANOFLAKE颗粒的半导体前驱层的高通量印刷

    公开(公告)号：US20090107550A1

    公开(公告)日：2009-04-30

    申请号：US11765422

    申请日：2007-06-19

    申请人： Jeroen K. J. Van Duren ,  Matthew R. Robinson ,  Brian M. Sager

    发明人： Jeroen K. J. Van Duren ,  Matthew R. Robinson ,  Brian M. Sager

    IPC分类号： H01L31/042 ,  C09B67/22

    CPC分类号： B22F9/04 ,  B22F1/0055 ,  B22F2001/0033 ,  B22F2999/00 ,  C22C1/0491 ,  C23C18/08 ,  C23C18/1204 ,  C23C18/1275 ,  C23C18/1287 ,  H01L31/0322 ,  H01L31/06 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  B22F2202/03

    摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.

    摘要翻译： 提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在选择性力沉降之后。 特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。 这些平面颗粒可以是具有高纵横比的纳米片。 由纳米片形成的致密膜特别适用于形成光电器件。 在一个实施方案中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片（微花纹或纳米薄片）。

    High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
    9.
    发明授权
    High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material 失效
    通过使用含硫属元素的蒸气和金属间材料对半导体前体层进行高通量打印

    公开(公告)号：US08309163B2

    公开(公告)日：2012-11-13

    申请号：US11395668

    申请日：2006-03-30

    申请人： Jeroen K. J. Van Duren ,  Matthew R. Robinson ,  Brian M. Sager

    发明人： Jeroen K. J. Van Duren ,  Matthew R. Robinson ,  Brian M. Sager

    IPC分类号： B05D5/12 ,  B05D3/02

    CPC分类号： H01L31/0322 ,  C23C18/1204 ,  H01L31/02008 ,  H01L31/048 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541

    摘要： A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.

    摘要翻译： 公开了一种通过使用含硫属原子的蒸气形成半导体前体层的高通量方法。 在一个实施方案中，该方法包括形成包含任何形状的IB族和/或IIIA族颗粒的前体材料。 该方法可以包括在衬底的表面上形成前体材料的前体层。 该方法还可以包括将基本上无氧的硫属元素气氛中的颗粒前体材料加热到足以使颗粒反应并从硫族化物颗粒中释放硫属元素的处理温度，其中硫族元素呈现液体形式并用作助熔剂以改善 元素的混合以期望的化学计量比形成IB-IIIA族硫族化合物膜。 硫属化合物气氛可以在处理温度下提供大于或等于前体层中液态硫属元素的蒸气压的分压。