发明申请
US20080121873A1 Organic Thin Film Transistor Material, Organic Thin Film Transistor, Field-Effect Transistor, Switching Element, Organic Semiconductor Material and Organic Semiconductor Film 有权
有机薄膜晶体管材料,有机薄膜晶体管,场效应晶体管,开关元件,有机半导体材料和有机半导体薄膜

Organic Thin Film Transistor Material, Organic Thin Film Transistor, Field-Effect Transistor, Switching Element, Organic Semiconductor Material and Organic Semiconductor Film
摘要:
An objective is to provide an organic thin film transistor material exhibiting an excellent property as a transistor together with reduced aging degradation, and also to provide an organic thin film transistor, a field-effect transistor, a switching element, an organic semiconductor material and an organic semiconductor film employing the organic thin film transistor material. Disclosed is an organic thin film transistor material possessing a compound represented by the following Formula (1). where A composed of a condensed ring formed with a 6 membered aromatic cycle or a 6 membered aromatic heterocycle represents C—R, N or P; at least one of As is N or P; R represents a hydrogen atom, a halogen atom or a substituent; and R may be bonded with other Rs with each other to form a ring.
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