公开(公告)号：US07968383B2

公开(公告)日：2011-06-28

申请号：US12335881

申请日：2008-12-16

申请人： Makoto Honda ,  Katsura Hirai

发明人： Makoto Honda ,  Katsura Hirai

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/7869 ,  H01L51/0008 ,  H01L51/0055 ,  H01L51/0094 ,  H01L51/0541 ,  H01L51/0545

摘要： A method of manufacturing an electronic device comprising the subsequent steps of: providing a thermal conversion material or an area comprising the thermal conversion material and, in an adjoining area or in a vicinity of the thermal conversion material or the area comprising the thermal conversion material, a material having an electromagnetic wave absorbing function or an area comprising the material having the electromagnetic wave absorbing function, in at least a portion on a substrate; and irradiating the substrate with an electromagnetic wave to transform the thermal conversion material into a functional material using a heat generated by the material having the electromagnetic wave absorbing function.

摘要翻译： 一种制造电子器件的方法，包括以下步骤：提供热转换材料或包含热转换材料的区域，并且在邻近的区域或热转换材料附近或包含热转换材料的区域中， 具有电磁波吸收功能的材料或包含具有电磁波吸收功能的材料的区域，至少部分在基板上; 并用电磁波照射基板，使用由具有电磁波吸收功能的材料产生的热量将热转换材料转变成功能材料。

公开(公告)号：US20100184253A1

公开(公告)日：2010-07-22

申请号：US12487954

申请日：2009-06-19

申请人： Katsura Hirai ,  Makoto Honda

发明人： Katsura Hirai ,  Makoto Honda

IPC分类号： H01L21/36

CPC分类号： H01L29/7869

摘要： Disclosed is a process for manufacturing a thin film transistor, the process comprising the steps of providing an oxide semiconductor precursor solution for an oxide semiconductor layer in which an oxide semiconductor precursor is dissolved in a solvent, coating the oxide semiconductor precursor solution on a substrate to form an oxide semiconductor precursor layer, patterning the oxide semiconductor precursor layer so that the oxide semiconductor precursor layer remains at portions where the oxide semiconductor layer is to be formed, and heating the remaining oxide semiconductor precursor layer to form the oxide semiconductor layer.

摘要翻译： 公开了一种制造薄膜晶体管的方法，该方法包括以下步骤：将氧化物半导体前体溶解在溶剂中的氧化物半导体层提供氧化物半导体前体溶液，将氧化物半导体前体溶液涂覆在基底上 形成氧化物半导体前体层，图案化氧化物半导体前体层，使得氧化物半导体前体层保留在要形成氧化物半导体层的部分，并加热剩余的氧化物半导体前体层以形成氧化物半导体层。

公开(公告)号：US20100072435A1

公开(公告)日：2010-03-25

申请号：US12560676

申请日：2009-09-16

申请人： Makoto HONDA ,  Katsura HIRAI

发明人： Makoto HONDA ,  Katsura HIRAI

IPC分类号： H01B1/02 ,  B05D3/02 ,  B05D3/06

CPC分类号： H01B1/22

摘要： A production method of a metal oxide precursor layer provided with a substrate, a solution containing a metal ion as a metal oxide precursor, and a process to coat the solution while the temperature of the substrate is adjusted in the temperature range of 50%-150% of the boiling point (° C.) of a main solvent of the solution.

摘要翻译： 设置有基板的金属氧化物前体层的制造方法，含有作为金属氧化物前体的金属离子的溶液以及在50％-150的温度范围内调整基板的温度的同时涂布溶液的工序 溶液的主要溶剂的沸点（℃）的％。

公开(公告)号：US07682867B2

公开(公告)日：2010-03-23

申请号：US11811131

申请日：2007-06-08

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： H01L51/40 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L51/0036 ,  H01L51/00 ,  H01L51/0002 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

摘要： Disclosed are an organic thin-film transistor and a manufacturing method thereof, the organic thin-film transistor comprising a support and provided thereon, a gate electrode, an insulation layer, a source electrode, a drain electrode, and an organic semiconductor layer, the support comprising at least one of resins, and the organic semiconductor layer containing at least one of organic semiconducting materials, wherein a phase transition temperature of one of the organic semiconducting materials is not more than a glass transition point of one of the resins.

摘要翻译： 公开了一种有机薄膜晶体管及其制造方法，所述有机薄膜晶体管包括支撑并设置在其上的栅电极，绝缘层，源电极，漏电极和有机半导体层， 包含至少一种树脂的载体，以及含有至少一种有机半导体材料的有机半导体层，其中一种有机半导体材料的相变温度不超过一种树脂的玻璃化转变温度。

公开(公告)号：US20100019319A1

公开(公告)日：2010-01-28

申请号：US12148603

申请日：2008-04-21

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L51/0022 ,  H01L21/31683 ,  H01L21/31687 ,  H01L27/283 ,  H01L51/0021 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an insulating area, which is electrode material-repellent, by providing an electrode material-repellent material on the substrate, and c) forming a source electrode on one end of the insulating area and a drain electrode on the other end of the insulating area, by providing an electrode material.

摘要翻译： 公开了一种薄膜晶体管，薄膜晶体管片，电路及其制造方法，所述方法包括以下步骤：通过在衬底上提供半导体材料形成半导体层，b）形成绝缘区域 ，其是通过在基板上设置电极材料排斥材料，以及c）在绝缘区域的一端形成源电极，在绝缘区域的另一端形成漏电极， 电极材料。

公开(公告)号：US20090256142A1

公开(公告)日：2009-10-15

申请号：US12375283

申请日：2007-07-17

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： H01L51/10 ,  H01L51/40 ,  H01L21/336

CPC分类号： H01L51/055 ,  H01L51/0022 ,  H01L51/0037 ,  H01L51/0064 ,  H01L51/0094 ,  H01L51/0541

摘要： Disclosed are an organic thin film transistor exhibiting a high switching current value even when a distance (channel length) between source and the drain electrodes is large, and a manufacturing method thereof. The organic thin film transistor of the invention comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, a drain electrode and at least one different type electrodes characterized in that the different type electrode is formed in a channel region between the source electrode and the drain electrode on the organic semiconductor layer.

摘要翻译： 公开了即使在源极和漏极之间的距离（沟道长度）大的情况下也表现出高开关电流值的有机薄膜晶体管及其制造方法。 本发明的有机薄膜晶体管包括基板，栅电极，栅极绝缘层，有机半导体层，源电极，漏电极和至少一个不同类型的电极，其特征在于，形成不同类型的电极 在有机半导体层上的源电极和漏电极之间的沟道区域。

公开(公告)号：US20080197349A1

公开(公告)日：2008-08-21

申请号：US12080729

申请日：2008-04-04

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： H01L51/05

CPC分类号： H01L51/0022 ,  H01L21/31683 ,  H01L21/31687 ,  H01L27/283 ,  H01L51/0021 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an insulating area, which is electrode material-repellent, by providing an electrode material-repellent material on the substrate, and c) forming a source electrode on one end of the insulating area and a drain electrode on the other end of the insulating area, by providing an electrode material.

摘要翻译： 公开了一种薄膜晶体管，薄膜晶体管片，电路及其制造方法，所述方法包括以下步骤：通过在衬底上提供半导体材料形成半导体层，b）形成绝缘区域 ，其是通过在基板上设置电极材料排斥材料，以及c）在绝缘区域的一端形成源电极，在绝缘区域的另一端形成漏电极， 电极材料。

公开(公告)号：US20080150044A1

公开(公告)日：2008-06-26

申请号：US12039875

申请日：2008-02-29

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： H01L27/12

CPC分类号： H01L51/0545 ,  H01L27/1292 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78609 ,  H01L51/0021 ,  H01L51/0022 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0097 ,  H01L51/0525 ,  H01L51/102 ,  H01L51/107

摘要： Disclosed are a process of manufacturing a thin-film transistor sheet and a thin-film transistor sheet manufactured by the process, the process comprising the steps of providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side, an insulation layer capable of receiving a fluid electrode material, supply the fluid electrode material to the insulation layer, the fluid electrode material being allowed to permeate the insulation layer, forming a gate electrode from the permeated fluid electrode material to be in contact with the gate busline, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on the gate insulating layer.

摘要翻译： 本发明公开了一种通过该方法制造薄膜晶体管片和薄膜晶体管片的方法，该方法包括以下步骤：在衬底上提供栅极总线，在栅极总线上的衬底表面上提供 能够接收流体电极材料的绝缘层，将流体电极材料供应到绝缘层，允许流体电极材料渗透绝缘层，从渗透流体电极材料形成栅电极以与 栅极母线，在栅电极上形成栅极绝缘层，并在栅极绝缘层上形成半导体层。

公开(公告)号：US20060131561A1

公开(公告)日：2006-06-22

申请号：US10545361

申请日：2004-02-17

申请人： Katsura Hirai ,  Hiroshi Kita ,  Hiroaki Arita

发明人： Katsura Hirai ,  Hiroshi Kita ,  Hiroaki Arita

IPC分类号： H01L29/08

CPC分类号： C23C16/30 ,  H01L51/0002 ,  H01L51/0005 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

摘要： It is an object of the present invention to provide an organic thin-film transistor exhibiting high carrier mobility and a manufacturing method thereof. Disclosed is an organic thin-film transistor prossessing a film having a contact angle against pure water of a surface of not less than 50°, wherein an organic semiconductor layer is formed on the film prepared by a CVD (chemical vapor deposition) method employing a reactive gas.

摘要翻译： 本发明的目的是提供一种显示高载流子迁移率的有机薄膜晶体管及其制造方法。 公开了一种有机薄膜晶体管，其考虑与表面的纯水接触角不小于50°的膜，其中在通过CVD（化学气相沉积）方法制备的膜上形成有机半导体层， 反应气体。

公开(公告)号：US20060006378A1

公开(公告)日：2006-01-12

申请号：US10528961

申请日：2003-09-24

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： H01L29/08

CPC分类号： H01L51/0508 ,  H01L51/002 ,  H01L51/0021 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0512 ,  H05K3/125 ,  H05K3/4644 ,  H05K2201/0116 ,  H05K2201/0329

摘要： An electrical circuit containing a substrate having thereon a receptive layer, wherein the receptive layer has a conductive polymer impregnated in the receptive layer, and a method for forming the electrical circuit.

摘要翻译： 一种包含其上具有接收层的基板的电路，其中所述接收层具有浸渍在所述接受层中的导电聚合物，以及形成所述电路的方法。