发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US11771340申请日： 2007-06-29
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公开(公告)号： US20080121950A1公开(公告)日： 2008-05-29
- 发明人: Tadashi YAMAGUCHI , Keiichiro Kashihara , Tomonori Okudaira , Toshiaki Tsutsumi
- 申请人： Tadashi YAMAGUCHI , Keiichiro Kashihara , Tomonori Okudaira , Toshiaki Tsutsumi
- 申请人地址： JP Chiyoda-ku
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2006-183133 20060703
- 主分类号： H01L29/04
- IPC分类号： H01L29/04
摘要：
Even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is realized.The channel length direction of n channel MISFET where the silicide region of nickel or a nickel alloy was formed on the source and the drain is arranged so that it may become parallel to the crystal orientation of a semiconductor substrate. Since it is hard to extend the silicide region of nickel or a nickel alloy in the direction of crystal orientation , even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is obtained.
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