发明申请
- 专利标题： INTEGRATED CIRCUIT HAVING DOPED SEMICONDUCTOR BODY AND METHOD
- 专利标题（中）： 具有掺杂半导体体的集成电路和方法
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申请号： US11944903申请日： 2007-11-26
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公开(公告)号： US20080122001A1公开(公告)日： 2008-05-29
- 发明人: Frank Pfirsch , Hans-Joachim Schulze , Franz-Josef Niedernostheide
- 申请人： Frank Pfirsch , Hans-Joachim Schulze , Franz-Josef Niedernostheide
- 申请人地址： DE Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： DE Villach
- 优先权： DE102006055885.5 20061127
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/22
摘要：
An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.
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