发明申请
US20080122028A1 INDUCTOR FORMED ON A SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING THE SAME
有权
在半导体基板上形成的电感器及其形成方法
- 专利标题： INDUCTOR FORMED ON A SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING THE SAME
- 专利标题（中）： 在半导体基板上形成的电感器及其形成方法
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申请号： US11468789申请日： 2006-08-31
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公开(公告)号： US20080122028A1公开(公告)日： 2008-05-29
- 发明人: Tsun-Lai Hsu , Jun-Hong Ou , Jui-Fang Chen , Ji-Wei Hsu
- 申请人： Tsun-Lai Hsu , Jun-Hong Ou , Jui-Fang Chen , Ji-Wei Hsu
- 申请人地址： TW Hsinchu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L27/00
- IPC分类号： H01L27/00 ; H01L21/62
摘要：
An inductor formed on a semiconductor substrate is provided in the present invention. The inductor comprises a metal layer and an insulator layer. The metal layer constitutes the coil of the inductor. The insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in the metal layer.
公开/授权文献
- US07948055B2 Inductor formed on semiconductor substrate 公开/授权日：2011-05-24
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