发明申请
- 专利标题： SEMICONDUCTOR DEVICE HAVING A INTERLAYER INSULATION FILM WITH LOW DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH
- 专利标题（中）： 具有低介电常数和高机械强度的中间层绝缘膜的半导体器件
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申请号： US11944053申请日： 2007-11-21
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公开(公告)号： US20080122121A1公开(公告)日： 2008-05-29
- 发明人: Shoichi Suda , Shino Tokuyo , Yoshihiro Nakata , Azuma Matsuura
- 申请人： Shoichi Suda , Shino Tokuyo , Yoshihiro Nakata , Azuma Matsuura
- 申请人地址： JP Kawasaki-shi
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2006-317446 20061124
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/4763
摘要：
A method for fabricating a semiconductor is disclosed.The method includes the steps of forming a porous insulation film and wires on the substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film.
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