公开(公告)号：US08872040B2

公开(公告)日：2014-10-28

申请号：US13530815

申请日：2012-06-22

申请人： Tsuyoshi Kanki ,  Shoichi Suda ,  Yoshihiro Nakata

发明人： Tsuyoshi Kanki ,  Shoichi Suda ,  Yoshihiro Nakata

IPC分类号： H05K1/00 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538

CPC分类号： H01L23/5389 ,  H01L23/49816 ,  H01L24/19 ,  H01L2224/12105 ,  H01L2924/01029 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T29/49126 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T428/12993 ,  Y10T428/24355 ,  Y10T428/24463 ,  Y10T428/31515 ,  H01L2924/00

摘要： A wiring structure includes: an insulating film formed over a substrate; a plurality of wirings formed on the insulating film; and an inducing layer, which is formed on the insulating film in a region between the plurality of wirings, a constituent atoms of the wirings are diffused in the inducing layer.

摘要翻译： 布线结构包括：形成在基板上的绝缘膜; 形成在所述绝缘膜上的多个布线; 以及在所述多个布线之间的区域中形成在所述绝缘膜上的感应层，所述布线的构成原子在所述诱导层中扩散。

公开(公告)号：US07732927B2

公开(公告)日：2010-06-08

申请号：US11944053

申请日：2007-11-21

申请人： Shoichi Suda ,  Shino Tokuyo ,  Yoshihiro Nakata ,  Azuma Matsuura

发明人： Shoichi Suda ,  Shino Tokuyo ,  Yoshihiro Nakata ,  Azuma Matsuura

IPC分类号： H01L23/48

CPC分类号： H01L21/76832 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76816 ,  H01L21/76825 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method includes the steps of forming a porous insulation film and wires on the substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film.

摘要翻译： 该方法包括以下步骤：在基板上形成多孔绝缘膜和导线，嵌入多孔绝缘膜中的电线具有与电线相邻的部分和与电线隔开的远端部分; 以及向远端部分施加能量束以改变多孔绝缘膜的结构，使得多孔绝缘膜的杨氏模量增加，从而显着增强多孔绝缘膜的强度。

公开(公告)号：US07439010B2

公开(公告)日：2008-10-21

申请号：US11124121

申请日：2005-05-09

申请人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

发明人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

IPC分类号： G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/039

CPC分类号： G03F7/0233 ,  C09D183/06 ,  G03F7/0045 ,  G03F7/0757

摘要： A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25≦a≦0.60, and 0≦c≦0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

摘要翻译： 具有由下式（1）表示的碱溶性硅氧烷聚合物的正型抗蚀剂组合物，感光性化合物和由正型抗蚀剂组合物形成的1μm厚的抗蚀剂膜，其具有对i的透射率的5％至60％ 线辐射; 在式（1）中，R 1和R 2表示一价有机基团，可以相同或不同; “A”是具有至少一个酚羟基的由下式（2）表示的基团; 和“a”，“b”和“c”满足下列关系： 在式（2）中，a + b + c = 1，R 3，R 4，R 5和R 5表示氢 原子和一价有机基团，并且可以相同或不同，“m”表示整数，“n”表示1至5的整数。优选地，0.25 <= a <= 0.60，0 <= c < 0.25。 该组合物优选用于进行氧等离子体蚀刻的抗蚀剂膜。

公开(公告)号：US20080081220A1

公开(公告)日：2008-04-03

申请号：US11985414

申请日：2007-11-15

申请人： Keiji Watanabe ,  Hiroshi Chiba ,  Eishin Yamakawa ,  Tsukasa Itani ,  Norikazu Nakamura ,  Shoichi Suda ,  Masayuki Takeda ,  Kazuaki Kurihara

发明人： Keiji Watanabe ,  Hiroshi Chiba ,  Eishin Yamakawa ,  Tsukasa Itani ,  Norikazu Nakamura ,  Shoichi Suda ,  Masayuki Takeda ,  Kazuaki Kurihara

IPC分类号： G11B5/725

CPC分类号： C23C14/024 ,  C23C14/0605 ,  G11B5/725 ,  G11B5/8408 ,  Y10T428/1164

摘要： A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.

公开(公告)号：US07244368B2

公开(公告)日：2007-07-17

申请号：US10397832

申请日：2003-03-27

申请人： Shoichi Suda ,  Masayuki Takeda ,  Keiji Watanabe

发明人： Shoichi Suda ,  Masayuki Takeda ,  Keiji Watanabe

IPC分类号： G11B5/127

CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  Y10T29/49052

摘要： A manufacturing method of a magnetic head includes a process for forming a lift-off mask pattern on a magnetoresistance effect element, such that the upper part of the lift-off mask pattern is larger in size than the lower part, a process for forming a couple of electrodes on the magnetoresistance effect element using the lift-off mask pattern as a mask, and a process for removing the lift-off mask pattern. The process for forming the lift-off mask pattern is performed according to a dry etching process.

摘要翻译： 磁头的制造方法包括在磁阻效应元件上形成剥离掩模图案的方法，使得剥离掩模图案的上部的尺寸比下部大，用于形成 使用剥离掩模图案作为掩模的磁阻效应元件上的一对电极，以及去除剥离掩模图案的处理。 根据干蚀刻工艺进行形成剥离掩模图案的工艺。

公开(公告)号：US20050221227A1

公开(公告)日：2005-10-06

申请号：US11124121

申请日：2005-05-09

申请人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

发明人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

IPC分类号： C08G77/38 ,  C09D183/06 ,  G03F7/004 ,  G03F7/023 ,  G03F7/075 ,  G03F7/40 ,  H01L21/027 ,  G03C1/492

CPC分类号： G03F7/0233 ,  C09D183/06 ,  G03F7/0045 ,  G03F7/0757

摘要： A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25≦a≦0.60, and 0≦c≦0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

公开(公告)号：US20060241247A1

公开(公告)日：2006-10-26

申请号：US11476179

申请日：2006-06-27

申请人： Keiji Watanabe ,  Hiroshi Chiba ,  Eishin Yamakawa ,  Tsukasa Itani ,  Norikazu Nakamura ,  Shoichi Suda ,  Masayuki Takeda ,  Kazuaki Kurihara

发明人： Keiji Watanabe ,  Hiroshi Chiba ,  Eishin Yamakawa ,  Tsukasa Itani ,  Norikazu Nakamura ,  Shoichi Suda ,  Masayuki Takeda ,  Kazuaki Kurihara

IPC分类号： C08F214/18

CPC分类号： C23C14/024 ,  C23C14/0605 ,  G11B5/725 ,  G11B5/8408 ,  Y10T428/1164

摘要： A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.

摘要翻译： 通过直流形成DLC保护膜来制造磁盘，产率提高。 磁控溅射工艺在含氧气体的溅射气氛中进行。 磁盘在DLC膜上携带润滑膜，其中构成润滑膜的碳氟树脂含有光交联基团。 还公开了具有非极性端基的润滑膜。

公开(公告)号：US20100210106A1

公开(公告)日：2010-08-19

申请号：US12768823

申请日：2010-04-28

申请人： Shoichi SUDA ,  Shino TOKUYO ,  Yoshihiro NAKATA ,  Azuma MATSUURA

发明人： Shoichi SUDA ,  Shino TOKUYO ,  Yoshihiro NAKATA ,  Azuma MATSUURA

IPC分类号： H01L21/3205

CPC分类号： H01L21/76832 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76816 ,  H01L21/76825 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor includes the steps of forming a porous insulation film and wires on a substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film.

摘要翻译： 一种制造半导体的方法包括以下步骤：在基板上形成多孔绝缘膜和导线，嵌入多孔绝缘膜中的电线具有与电线相邻的部分和与电线间隔开的远端部分; 以及向远端部分施加能量束以改变多孔绝缘膜的结构，使得多孔绝缘膜的杨氏模量增加，从而显着增强多孔绝缘膜的强度。

公开(公告)号：US20080122121A1

公开(公告)日：2008-05-29

申请号：US11944053

申请日：2007-11-21

申请人： Shoichi Suda ,  Shino Tokuyo ,  Yoshihiro Nakata ,  Azuma Matsuura

发明人： Shoichi Suda ,  Shino Tokuyo ,  Yoshihiro Nakata ,  Azuma Matsuura

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/76832 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76816 ,  H01L21/76825 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor is disclosed.The method includes the steps of forming a porous insulation film and wires on the substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film.

摘要翻译： 公开了一种制造半导体的方法。 该方法包括以下步骤：在基板上形成多孔绝缘膜和导线，嵌入多孔绝缘膜中的电线具有与电线相邻的部分和与电线隔开的远端部分; 以及向远端部分施加能量束以改变多孔绝缘膜的结构，使得多孔绝缘膜的杨氏模量增加，从而显着增强多孔绝缘膜的强度。

公开(公告)号：US08691699B2

公开(公告)日：2014-04-08

申请号：US13427200

申请日：2012-03-22

申请人： Tsuyoshi Kanki ,  Shoichi Suda ,  Shinya Sasaki

发明人： Tsuyoshi Kanki ,  Shoichi Suda ,  Shinya Sasaki

IPC分类号： H01L21/311

CPC分类号： H01L23/5389 ,  H01L21/4846 ,  H01L23/49822 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2924/01029 ,  H01L2924/3511 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device includes: forming an insulating layer above a substrate; forming a recessed section in the insulating layer; forming, on the insulating layer, a mask pattern having a first opening which exposes the recessed section, and a second opening which is arranged outside the first opening and does not expose the recessed section; forming a first conductive member and a second conductive member by respectively depositing a conductive material in the first opening and the second opening; and polishing and removing the first conductive member and the second conductive member on the upper side of the insulating layer so as to leave the first conductive member in the recessed section.

摘要翻译： 半导体器件的制造方法包括：在衬底上形成绝缘层; 在所述绝缘层中形成凹部; 在所述绝缘层上形成具有露出所述凹部的第一开口的掩模图案，以及布置在所述第一开口的外侧并且不露出所述凹部的第二开口; 通过在所述第一开口和所述第二开口中分别沉积导电材料来形成第一导电构件和第二导电构件; 并且在绝缘层的上侧抛光和去除第一导电构件和第二导电构件，以便将第一导电构件留在凹部中。