A non-volatile memory device and a method of fabricating the same are provided. In the non-volatile memory device, at least one first semiconductor layer of a first conductivity type may be formed spaced apart from each other on a portion of a substrate. A plurality of first resistance variation storage layers may contact first sidewalls of each of the at least one first semiconductor layer. A plurality of second semiconductor layers of a second conductivity type, opposite to the first conductivity type, may be interposed between the first sidewalls of each of the at least one first semiconductor layer and the plurality of first resistance variation storage layers. A plurality of bit line electrodes may be connected to each of the plurality of first resistance variation storage layers.