发明申请
- 专利标题： Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element
- 专利标题（中）： 双光束干涉曝光装置，双光束干涉曝光方法，半导体发光元件制造方法和半导体发光元件
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申请号： US11897895申请日： 2007-08-31
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公开(公告)号： US20080123713A1公开(公告)日： 2008-05-29
- 发明人: Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
- 申请人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
- 申请人地址： JP Nagoya
- 专利权人： Meijo University
- 当前专利权人： Meijo University
- 当前专利权人地址： JP Nagoya
- 优先权： JPJP2005-056285 20050301
- 主分类号： H01S3/08
- IPC分类号： H01S3/08 ; H01L21/02
摘要：
The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.