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    SiC crystal and semiconductor device
    1.
    发明申请
    SiC crystal and semiconductor device 有权
    SiC晶体和半导体器件

    公开(公告)号：US20080277670A1

    公开(公告)日：2008-11-13

    申请号：US12152016

    申请日：2008-05-12

    申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

    发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

    IPC分类号： H01L33/00

    CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

    摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

    摘要翻译： 本发明公开了一种SiC晶体，其包括：浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3，且大于受体杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于 浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

    Semiconductor light emitting element
    4.
    发明授权
    Semiconductor light emitting element 有权
    半导体发光元件

    公开(公告)号：US08941136B2

    公开(公告)日：2015-01-27

    申请号：US13394543

    申请日：2010-08-23

    申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

    发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

    IPC分类号： H01L33/00 ,  H01L33/22 ,  H01L33/40

    CPC分类号： H01L33/10 ,  H01L33/007 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0058

    摘要： A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.

    摘要翻译： 半导体发光元件包括：半导体堆叠部，其包括发光层，从发光层射出的光入射的衍射面，形成在比所述发光层的光波长长的时间内形成的凸部或凹部 光并且短于光的相干长度，其中衍射面根据布拉格的衍射条件以多模式反射入射光，并根据布拉格的衍射条件将入射光透射到多模中，并且反射面反射多模光 在衍射面衍射并使多模光再次入射到衍射面。 半导体堆叠部分形成在衍射面上。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
    半导体发光元件

    公开(公告)号：US20120228656A1

    公开(公告)日：2012-09-13

    申请号：US13394543

    申请日：2010-08-23

    申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

    发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

    IPC分类号： H01L33/10 ,  H01L33/00

    CPC分类号： H01L33/10 ,  H01L33/007 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0058

    摘要： [PROBLEM] A light extraction efficiency increases by suppressing a reflection of a semiconductor layer and a transparent substrate.[MEANS FOR SOLVING] A semiconductor light emitting element comprising a semiconductor stack part including a light emitting layer is formed on a main surface of a substrate, a diffractive face that light emitted from the light emitting layer is incident to, that convex portions or concave portions are formed in a period which is longer than optical wavelength of the light and is shorter than coherent length of the light, is formed on a main surface side of the substrate, and a reflective face which reflects light diffracted at the diffractive face and let this light be incident to the diffractive face again is formed on a back surface side of the substrate.

    摘要翻译： [问题]通过抑制半导体层和透明基板的反射来提高光提取效率。 解决方案包括发光层的半导体堆叠部分的半导体发光元件形成在基板的主表面上，从发光层发射的光入射到该凸部或凹部的衍射面 部分形成在比光的光波长长并且短于光的相干长度的周期中，形成在基板的主表面侧上，反射面反射在衍射面衍射的光，并使 在基板的背面侧形成有再次入射到衍射面的光。

    SiC crystal and semiconductor device
    8.
    发明授权
    SiC crystal and semiconductor device 有权
    SiC晶体和半导体器件

    公开(公告)号：US07855385B2

    公开(公告)日：2010-12-21

    申请号：US12152016

    申请日：2008-05-12

    申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

    发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

    IPC分类号： H01L31/0312

    CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

    摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

    摘要翻译： 本发明公开了一种SiC晶体，其包含：浓度大于5×1017cm-3的受主杂质; 供体杂质浓度小于1×1019 cm-3，大于受主杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×1017cm-3的受主杂质的SiC荧光层和浓度小于1×1019 cm -3并且大于 受体杂质浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。