发明申请
US20080128924A1 Semiconductor Device Having In-Chip Critical Dimension and Focus Patterns
失效
具有片内临界尺寸和聚焦模式的半导体器件
- 专利标题： Semiconductor Device Having In-Chip Critical Dimension and Focus Patterns
- 专利标题（中）： 具有片内临界尺寸和聚焦模式的半导体器件
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申请号： US11567055申请日： 2006-12-05
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公开(公告)号： US20080128924A1公开(公告)日： 2008-06-05
- 发明人: George Liu , Vencent Chang , Chin-Hsiang Lin , Kuei Shun Chen , Norman Chen
- 申请人： George Liu , Vencent Chang , Chin-Hsiang Lin , Kuei Shun Chen , Norman Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L21/66 ; G03F7/20
摘要：
A semiconductor device is fabricated to include one or more sets of calibration patterns used to measure line pitch and line focus.
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