发明申请
- 专利标题: PIXEL STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- 专利标题(中): 像素结构及其制造方法
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申请号: US11740937申请日: 2007-04-27
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公开(公告)号: US20080129664A1公开(公告)日: 2008-06-05
- 发明人: Hsiang-Lin Lin , Ching-Yu Tsai , Yi-Sheng Cheng , Kuo-Yu Huang
- 申请人: Hsiang-Lin Lin , Ching-Yu Tsai , Yi-Sheng Cheng , Kuo-Yu Huang
- 申请人地址: TW Hsinchu
- 专利权人: AU OPTRONICS CORPORATION
- 当前专利权人: AU OPTRONICS CORPORATION
- 当前专利权人地址: TW Hsinchu
- 优先权: TW95144596 20061130
- 主分类号: G09G3/36
- IPC分类号: G09G3/36
摘要:
A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.
公开/授权文献
- US08018013B2 Pixel structure and method for manufacturing thereof 公开/授权日:2011-09-13
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