发明申请
- 专利标题： Simulation model making method
- 专利标题（中）： 仿真模型制作方法
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申请号： US11976025申请日： 2007-10-19
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公开(公告)号： US20080134131A1公开(公告)日： 2008-06-05
- 发明人: Masafumi Asano , Masaki Satake , Satoshi Tanaka
- 申请人： Masafumi Asano , Masaki Satake , Satoshi Tanaka
- 优先权： JP2006-286914 20061020; JP2007-245064 20070921
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
A method of making a simulation model, includes specifying a feature factor which characterizes a pattern layout of a mask pattern, specifying a control factor which affects a dimension of a resist pattern to be formed on a substrate by means of a lithography process using the mask pattern, determining a predicted dimension of the resist pattern to be formed on the substrate by means of the lithography process using the mask pattern through the use of a model based on the feature and control factors, obtaining an actual dimension of the resist pattern actually formed on the substrate by means of the lithography process using the mask pattern, and setting the feature and control factors and the predicted dimension as input layers and setting the actual dimension as an output layer to construct a neural network.
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