公开(公告)号：US20080134131A1

公开(公告)日：2008-06-05

申请号：US11976025

申请日：2007-10-19

申请人： Masafumi Asano ,  Masaki Satake ,  Satoshi Tanaka

发明人： Masafumi Asano ,  Masaki Satake ,  Satoshi Tanaka

IPC分类号： G06F17/50

CPC分类号： G03F7/70425 ,  G03F7/70491 ,  G03F7/705 ,  G03F7/70616

摘要： A method of making a simulation model, includes specifying a feature factor which characterizes a pattern layout of a mask pattern, specifying a control factor which affects a dimension of a resist pattern to be formed on a substrate by means of a lithography process using the mask pattern, determining a predicted dimension of the resist pattern to be formed on the substrate by means of the lithography process using the mask pattern through the use of a model based on the feature and control factors, obtaining an actual dimension of the resist pattern actually formed on the substrate by means of the lithography process using the mask pattern, and setting the feature and control factors and the predicted dimension as input layers and setting the actual dimension as an output layer to construct a neural network.

摘要翻译： 一种制作仿真模型的方法包括指定表征掩模图案的图案布局的特征因子，通过使用掩模的光刻工艺指定影响待形成在抗蚀剂图案的尺寸的控制因素 通过使用基于特征和控制因子的模型通过使用掩模图案的光刻处理来确定要在基板上形成的抗蚀剂图案的预测尺寸，获得实际形成的抗蚀剂图案的实际尺寸 通过使用掩模图案的光刻工艺在衬底上，并将特征和控制因子和预测尺寸设置为输入层，并将实际尺寸设置为输出层以构建神经网络。

公开(公告)号：US20100166289A1

公开(公告)日：2010-07-01

申请号：US12646677

申请日：2009-12-23

申请人： Masaki SATAKE ,  Masafumi Asano ,  Satoshi Tanaka ,  Taiga Uno

发明人： Masaki SATAKE ,  Masafumi Asano ,  Satoshi Tanaka ,  Taiga Uno

IPC分类号： G06K9/46 ,  G06T7/00

CPC分类号： G03F1/44 ,  G03F7/705

摘要： Feature-quantity extraction parameters used by feature-quantity extraction functions for calculating feature quantities used as explanatory variables of a resist model for predicting a resist image are set. The feature-quantity extraction functions, for which the feature-quantity extraction parameters are set, are caused to act on optical images of a pattern of a photomask to calculate feature quantities from the optical images.

摘要翻译： 设置用于计算用作预测抗蚀剂图像的抗蚀剂模型的解释变量的特征量的特征量提取函数所使用的特征量提取参数。 使特征量提取参数被设置的特征量提取功能作用于光掩模图案的光学图像，以计算来自光学图像的特征量。

公开(公告)号：US20100081295A1

公开(公告)日：2010-04-01

申请号：US12548955

申请日：2009-08-27

申请人： Masanori TAKAHASHI ,  Masaki Satake ,  Satoshi Tanaka

发明人： Masanori TAKAHASHI ,  Masaki Satake ,  Satoshi Tanaka

IPC分类号： H01L21/027 ,  G03F7/20 ,  G06F17/50

CPC分类号： G03F1/36

摘要： According to an aspect of the present invention, there is provided a method for evaluating a process model, the method including: acquiring, for each of given patterns, a dimensional difference amount between: a first pattern that is formed by actually applying a process onto a corresponding one of the given patterns; and a second pattern that is calculated by applying a process model modeling the process to the corresponding one of the given patterns; and evaluating the process model based on an evaluation index, the evaluation index being based on the number of the patterns at which the dimensional difference amount is equal to or less than a threshold value.

摘要翻译： 根据本发明的一个方面，提供了一种用于评估过程模型的方法，所述方法包括：针对每个给定模式，获取以下之间的尺寸差异量：通过实际应用过程形成的第一图案到 给定模式中的相应一个; 以及通过将过程模型建模到给定模式中的相应一个模型来计算的第二模式; 以及基于评价指标来评价所述过程模型，所述评价指标基于所述维度差量等于或小于阈值的模式的数量。

公开(公告)号：US20070277146A1

公开(公告)日：2007-11-29

申请号：US11802615

申请日：2007-05-24

申请人： Masaki Satake ,  Hiromitsu Mashita ,  Satoshi Tanaka

发明人： Masaki Satake ,  Hiromitsu Mashita ,  Satoshi Tanaka

IPC分类号： G06F17/50

CPC分类号： G06F17/5009 ,  G03F1/36 ,  G03F7/705 ,  G03F7/70666

摘要： A lithography simulation method which predicts the result that a pattern formed on a mask is transferred onto a sample by use of a simulation based on pattern data of the mask includes subjecting a mask layout containing a pattern whose periodicity is disturbed to the simulation. At this time, a calculation area of pattern data used for the simulation is set to an integral multiple of minimum periodic length of the mask layout.

摘要翻译： 通过使用基于掩模的图案数据的模拟将掩模上形成的图案转移到样本上的结果的光刻仿真方法包括对包含周期性被扰乱的图案的掩模布局进行模拟。 此时，将用于模拟的图案数据的计算区域设置为掩模布局的最小周期长度的整数倍。

公开(公告)号：US07784017B2

公开(公告)日：2010-08-24

申请号：US11783935

申请日：2007-04-13

申请人： Masaki Satake ,  Satoshi Tanaka

发明人： Masaki Satake ,  Satoshi Tanaka

IPC分类号： G06F17/50

CPC分类号： G03F7/70666 ,  G03F7/705

摘要： A lithography simulation method includes obtaining a mask transmission function from a mask layout, obtaining an optical image of the mask layout by using the mask transmission function, obtaining a function which is filtered by applying a predetermined function filter to the mask transmission function, and correcting the optical image by using the filtered function.

摘要翻译： 平版印刷模拟方法包括从掩模布局获得掩模传输功能，通过使用掩模传输功能获得掩模布局的光学图像，获得通过对掩模传输功能应用预定功能滤波器而被滤波的功能，以及校正 通过使用滤波功能的光学图像。

公开(公告)号：US20070245292A1

公开(公告)日：2007-10-18

申请号：US11783935

申请日：2007-04-13

申请人： Masaki Satake ,  Satoshi Tanaka

发明人： Masaki Satake ,  Satoshi Tanaka

IPC分类号： G06F17/50

CPC分类号： G03F7/70666 ,  G03F7/705

摘要： A lithography simulation method includes obtaining a mask transmission function from a mask layout, obtaining an optical image of the mask layout by using the mask transmission function, obtaining a function which is filtered by applying a predetermined function filter to the mask transmission function, and correcting the optical image by using the filtered function.

摘要翻译： 平版印刷模拟方法包括从掩模布局获得掩模传输功能，通过使用掩模传输功能获得掩模布局的光学图像，获得通过对掩模传输功能应用预定功能滤波器而被滤波的功能，以及校正 通过使用滤波功能的光学图像。

公开(公告)号：US07855047B2

公开(公告)日：2010-12-21

申请号：US12654292

申请日：2009-12-16

申请人： Masafumi Asano ,  Tadahito Fujisawa ,  Satoshi Tanaka

发明人： Masafumi Asano ,  Tadahito Fujisawa ,  Satoshi Tanaka

IPC分类号： H01L21/00 ,  G03F1/00 ,  G03C5/00

CPC分类号： G03F7/70466 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70625

摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.

公开(公告)号：US07175943B2

公开(公告)日：2007-02-13

申请号：US10725571

申请日：2003-12-03

申请人： Masafumi Asano ,  Tadahito Fujisawa ,  Satoshi Tanaka

发明人： Masafumi Asano ,  Tadahito Fujisawa ,  Satoshi Tanaka

IPC分类号： G01F9/00

CPC分类号： G03F7/70466 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70625

摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.

公开(公告)号：US20100112485A1

公开(公告)日：2010-05-06

申请号：US12654292

申请日：2009-12-16

申请人： Masafumi Asano ,  Tadahito Fujisawa ,  Satoshi Tanaka

发明人： Masafumi Asano ,  Tadahito Fujisawa ,  Satoshi Tanaka

IPC分类号： G03F7/20

CPC分类号： G03F7/70466 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70625

摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.

摘要翻译： 标线组包括具有电路图案的第一光掩模，该电路图案设置有彼此相邻设置的夹着第一不透明部分的第一和第二开口以及邻近电路图案设置的监视标记; 以及第二光掩模，其具有装饰图案，其具有覆盖所述电路图案占据的区域中的所述第一不透明部分的第二不透明部分和连接到所述第一不透明部分的一端的延伸部分，并且当所述第二光掩模为 与通过第一光掩模在衬底上描绘的图案对准。

公开(公告)号：US20070259280A1

公开(公告)日：2007-11-08

申请号：US11819375

申请日：2007-06-27

申请人： Tadahito Fujisawa ,  Soichi Inoue ,  Satoshi Tanaka ,  Masafumi Asano

发明人： Tadahito Fujisawa ,  Soichi Inoue ,  Satoshi Tanaka ,  Masafumi Asano

IPC分类号： G03F7/20 ,  G03F1/00 ,  G03C5/00 ,  G03F7/40 ,  G03F7/38

CPC分类号： G03F1/44

摘要： A photomask transferring a light shield film pattern formed on a transparent substrate by a projection exposure apparatus, comprising a circuit pattern for transferring a predetermined pattern to a resist film, and an exposure monitor mark, the exposure monitor mark being formed in a manner that blocks having a predetermined width p, which are not resolved by the projection exposure apparatus, are intermittently or continuously arrayed along one direction, light shield and transmission portions are arrayed along one direction in each of the blocks, the blocks are arrayed so that a dimension ratio of the light shield and transmission portions of the blocks simply changes and the phase difference of exposure light passing through adjacent light transmission portions is approximately 180°.

摘要翻译： 一种光掩模，其通过投影曝光装置将形成在透明基板上的遮光膜图案转印，所述投影曝光装置包括用于将预定图案转印到抗蚀剂膜的电路图案，以及曝光监视标记，所述曝光监视标记以块 具有未被投影曝光装置解析的预定宽度p沿着一个方向间歇地或连续地排列，在每个块中沿着一个方向排列有光屏蔽和透射部分，块被排列成使得尺寸比 的光屏蔽和透射部分简单地改变，并且穿过相邻光传输部分的曝光光的相位差大约为180°。