发明申请
US20080135875A1 RELAXED LOW-DEFECT SGOI FOR STRAINED Si CMOS APPLICATIONS
有权
用于应变Si CMOS应用的松弛低缺陷SGOI
- 专利标题： RELAXED LOW-DEFECT SGOI FOR STRAINED Si CMOS APPLICATIONS
- 专利标题（中）： 用于应变Si CMOS应用的松弛低缺陷SGOI
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申请号： US12031530申请日： 2008-02-14
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公开(公告)号： US20080135875A1公开(公告)日： 2008-06-12
- 发明人: Paul D. Agnello , Stephen W. Bedell , Robert H. Dennard , Anthony G. Domenicucci , Keith E. Fogel , Devendra K. Sadana
- 申请人： Paul D. Agnello , Stephen W. Bedell , Robert H. Dennard , Anthony G. Domenicucci , Keith E. Fogel , Devendra K. Sadana
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L27/12
摘要：
Thermal mixing methods of forming a substantially relaxed and low-defect SGOI substrate material are provided. The methods include a patterning step which is used to form a structure containing at least SiGe islands formed atop a Ge resistant diffusion barrier layer. Patterning of the SiGe layer into islands changes the local forces acting at each of the island edges in such a way so that the relaxation force is greater than the forces that oppose relaxation. The absence of restoring forces at the edges of the patterned layers allows the final SiGe film to relax further than it would if the film was continuous.
公开/授权文献
- US08227792B2 Relaxed low-defect SGOI for strained SI CMOS applications 公开/授权日：2012-07-24
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