High voltage schottky diodes are provided including a first conductivity type semiconductor substrate and a second conductivity type well region defined by the substrate. A first conductive film is provided on a surface of the substrate including the well. A conductive electrode is provided on at least one side of the first conductive film above the substrate including the well. An insulating film is provided between the conductive electrode and the substrate. A cathode contact region is provided outside the conductive electrode remote from the first conductive film. The cathode contact region is doped with high concentration impurities having a second conductive type.