公开(公告)号：US20080135970A1

公开(公告)日：2008-06-12

申请号：US11947066

申请日：2007-11-29

申请人： Yong-don Kim ,  Sun-hyun Kim ,  Jung-soo Yoo ,  Ji-hoon Cho ,  Seung-teck Lee

发明人： Yong-don Kim ,  Sun-hyun Kim ,  Jung-soo Yoo ,  Ji-hoon Cho ,  Seung-teck Lee

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L29/402

摘要： High voltage schottky diodes are provided including a first conductivity type semiconductor substrate and a second conductivity type well region defined by the substrate. A first conductive film is provided on a surface of the substrate including the well. A conductive electrode is provided on at least one side of the first conductive film above the substrate including the well. An insulating film is provided between the conductive electrode and the substrate. A cathode contact region is provided outside the conductive electrode remote from the first conductive film. The cathode contact region is doped with high concentration impurities having a second conductive type.

摘要翻译： 提供了高压肖特基二极管，其包括由衬底限定的第一导电类型半导体衬底和第二导电类型阱区。 在包括该阱的基板的表面上设置第一导电膜。 导电电极设置在第一导电膜的至少一侧上方的包括该阱的基板上。 在导电电极和基板之间设置绝缘膜。 阴极接触区域设置在远离第一导电膜的导电电极的外侧。 阴极接触区域掺杂有具有第二导电类型的高浓度杂质。