Invention Application
- Patent Title: FLASH MEMORY DEVICES AND METHODS OF PROGRAMMING THE SAME BY OVERLAPPING PROGRAMMING OPERATIONS FOR MULTIPLE MATS
- Patent Title (中): 闪存存储器件及其编程方法通过重写多个程序的编程操作
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Application No.: US12034968Application Date: 2008-02-21
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Publication No.: US20080137420A1Publication Date: 2008-06-12
- Inventor: Jin-Sung Park , Dae-Seok Byeon
- Applicant: Jin-Sung Park , Dae-Seok Byeon
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Priority: KR2004-109827 20041221
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A flash memory device is programmed by loading first data into a page buffer of a first mat. Second data is loaded into a page buffer of a second mat while programming the first data in a first memory block of the first mat.
Public/Granted literature
Information query
