发明申请
US20080137436A1 PROGRAMMING METHOD FOR NON-VOLATILE MEMORY AND NON-VOLATILE MEMORY-BASED PROGRAMMABLE LOGIC DEVICE
有权
非易失性存储器和非易失性存储器可编程逻辑器件的编程方法
- 专利标题: PROGRAMMING METHOD FOR NON-VOLATILE MEMORY AND NON-VOLATILE MEMORY-BASED PROGRAMMABLE LOGIC DEVICE
- 专利标题(中): 非易失性存储器和非易失性存储器可编程逻辑器件的编程方法
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申请号: US12024867申请日: 2008-02-01
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公开(公告)号: US20080137436A1公开(公告)日: 2008-06-12
- 发明人: Robert M. Salter , Kyung Joon Han , Sung-Rae Kim , Nigel Chan
- 申请人: Robert M. Salter , Kyung Joon Han , Sung-Rae Kim , Nigel Chan
- 申请人地址: US CA Mountain View
- 专利权人: ACTEL CORPORATION
- 当前专利权人: ACTEL CORPORATION
- 当前专利权人地址: US CA Mountain View
- 主分类号: G11C16/34
- IPC分类号: G11C16/34
摘要:
A method for programming a flash memory cell comprises providing input data to the flash cell and providing a segmented programming pulse to the flash memory cell. The segmented programming pulse includes programming segments, each successive programming segment including a programming potential higher than the programming potential used in a previous programming segment, each programming segment followed by a zero-potential compare segment. The output of the flash memory cell is compared with the input data during the compare segment after each programming segment. The segmented programming pulse is terminated if the output of the flash memory cell matches the input data. The programming potential in each programming segment is increased during the programming segment. The programming potential in successive segments is either is increased or stepped up to the final value of the previous programming segment.
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