发明申请
US20080142052A1 METHOD FOR CLEANING BACKSIDE ETCH DURING MANUFACTURE OF INTEGRATED CIRCUITS
有权
在集成电路制造过程中清洗背面蚀刻的方法
- 专利标题: METHOD FOR CLEANING BACKSIDE ETCH DURING MANUFACTURE OF INTEGRATED CIRCUITS
- 专利标题(中): 在集成电路制造过程中清洗背面蚀刻的方法
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申请号: US11611403申请日: 2006-12-15
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公开(公告)号: US20080142052A1公开(公告)日: 2008-06-19
- 发明人: Yan Wu Chang , Tek Sing Lim
- 申请人: Yan Wu Chang , Tek Sing Lim
- 申请人地址: CN Shanghai
- 专利权人: Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人: Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址: CN Shanghai
- 主分类号: B08B3/08
- IPC分类号: B08B3/08
摘要:
A method for manufacturing semiconductor substrates. The method includes providing a semiconductor wafer, which has an upper surface, a backside surface, and an edge region around a periphery of the semiconductor wafer. In a preferred embodiment, the upper surface is often for the manufacture of the integrated circuit device elements themselves. The method includes subjecting the semiconductor wafer to one or more process steps to form one or more films of materials on the backside surface. The method mounts the semiconductor wafer to expose the backside surface. The method rotates the semiconductor wafer in a circular manner. In a specific embodiment, the method includes supplying an acid solution containing fluorine bearing species, a nitric acid species, a surfactant species, and an organic acid species, on at least the backside surface as the semiconductor wafer rotates. The method causes removal of one or more contaminants from the backside surface, while a portion of the center region of the backside surface remains exposed as the semiconductor wafer rotates in the circular manner.
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