公开(公告)号：US20080142052A1

公开(公告)日：2008-06-19

申请号：US11611403

申请日：2006-12-15

申请人： Yan Wu Chang ,  Tek Sing Lim

发明人： Yan Wu Chang ,  Tek Sing Lim

IPC分类号： B08B3/08

CPC分类号： H01L21/6708 ,  H01L21/67051

摘要： A method for manufacturing semiconductor substrates. The method includes providing a semiconductor wafer, which has an upper surface, a backside surface, and an edge region around a periphery of the semiconductor wafer. In a preferred embodiment, the upper surface is often for the manufacture of the integrated circuit device elements themselves. The method includes subjecting the semiconductor wafer to one or more process steps to form one or more films of materials on the backside surface. The method mounts the semiconductor wafer to expose the backside surface. The method rotates the semiconductor wafer in a circular manner. In a specific embodiment, the method includes supplying an acid solution containing fluorine bearing species, a nitric acid species, a surfactant species, and an organic acid species, on at least the backside surface as the semiconductor wafer rotates. The method causes removal of one or more contaminants from the backside surface, while a portion of the center region of the backside surface remains exposed as the semiconductor wafer rotates in the circular manner.

摘要翻译： 一种半导体衬底的制造方法。 该方法包括提供半导体晶片，该半导体晶片具有上表面，后表面和围绕半导体晶片周边的边缘区域。 在优选实施例中，上表面通常用于制造集成电路器件元件本身。 该方法包括使半导体晶片经受一个或多个工艺步骤以在背面上形成一个或多个材料膜。 该方法安装半导体晶片以露出背面。 该方法以圆形方式旋转半导体晶片。 在具体实施方案中，该方法包括在半导体晶片旋转时在至少后侧表面上提供含有氟含量的种类的酸溶液，硝酸物质，表面活性剂种类和有机酸物质。 该方法从背面表面去除一种或多种污染物，而当半导体晶片以圆形方式旋转时，背面的中心区域的一部分保持暴露。

公开(公告)号：US08420550B2

公开(公告)日：2013-04-16

申请号：US11611403

申请日：2006-12-15

申请人： Yan Wu Chang ,  Tek Sing Lim

发明人： Yan Wu Chang ,  Tek Sing Lim

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/6708 ,  H01L21/67051

摘要： A method for manufacturing semiconductor substrates. The method includes providing a semiconductor wafer, which has an upper surface, a backside surface, and an edge region around a periphery of the semiconductor wafer. In a preferred embodiment, the upper surface is often for the manufacture of the integrated circuit device elements themselves. The method includes subjecting the semiconductor wafer to one or more process steps to form one or more films of materials on the backside surface. The method mounts the semiconductor wafer to expose the backside surface. The method rotates the semiconductor wafer in a circular manner. In a specific embodiment, the method includes supplying an acid solution containing fluorine bearing species, a nitric acid species, a surfactant species, and an organic acid species, on at least the backside surface as the semiconductor wafer rotates. The method causes removal of one or more contaminants from the backside surface, while a portion of the center region of the backside surface remains exposed as the semiconductor wafer rotates in the circular manner.

摘要翻译： 一种半导体衬底的制造方法。 该方法包括提供半导体晶片，该半导体晶片具有上表面，后表面和围绕半导体晶片周边的边缘区域。 在优选实施例中，上表面通常用于制造集成电路器件元件本身。 该方法包括使半导体晶片经受一个或多个工艺步骤以在背面上形成一个或多个材料膜。 该方法安装半导体晶片以露出背面。 该方法以圆形方式旋转半导体晶片。 在具体实施方案中，该方法包括在半导体晶片旋转时在至少后侧表面上提供含有氟含量的种类的酸溶液，硝酸物质，表面活性剂种类和有机酸物质。 该方法从背面表面去除一种或多种污染物，而当半导体晶片以圆形方式旋转时，背面的中心区域的一部分保持暴露。