发明申请
US20080142780A1 Light-Emitting Diode Chip 有权
发光二极管芯片

  • 专利标题: Light-Emitting Diode Chip
  • 专利标题(中): 发光二极管芯片
  • 申请号: US11578657
    申请日: 2005-04-14
  • 公开(公告)号: US20080142780A1
    公开(公告)日: 2008-06-19
  • 发明人: Stefan BaderWolfgang Schmid
  • 申请人: Stefan BaderWolfgang Schmid
  • 优先权: DE102004018484.4 20040414; DE102005016592.3 20050411
  • 国际申请: PCT/DE05/00677 WO 20050414
  • 主分类号: H01L29/06
  • IPC分类号: H01L29/06
Light-Emitting Diode Chip
摘要:
A thin-film light-emitting diode chip, in which the distance between a mirror layer (4) and a light-generating active zone (3) is set in such a way that a radiation emitted by the active zone (3) interferes with a light reflected from the mirror layer (4), the internal quantum efficiency of the active zone (3) being influenced by this interference and the emission characteristic of the active zone (3) of at least one preferred direction thereby being obtained.
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