发明申请
- 专利标题： HEMT including MIS structure
- 专利标题（中）： HEMT包括MIS结构
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申请号： US12000528申请日： 2007-12-13
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公开(公告)号： US20080142845A1公开(公告)日： 2008-06-19
- 发明人: Masahito KODAMA , Eiko HAYASHI , Tsutomu UESUGI , Masahiro SUGIMOTO
- 申请人： Masahito KODAMA , Eiko HAYASHI , Tsutomu UESUGI , Masahiro SUGIMOTO
- 专利权人： Toyota Jidosha Kabushiki Kaisha
- 当前专利权人： Toyota Jidosha Kabushiki Kaisha
- 优先权： JP2006-336208 20061213
- 主分类号： H01L29/778
- IPC分类号： H01L29/778
摘要：
A HEMT has a drain region adapted to be electrically connected to a high voltage of an electric source, a source region adapted to be electrically connected to a low voltage of the electric source. A first semiconductor region is disposed between the drain region and the source region. A MIS structure and a heterostructure are disposed at a surface of the first semiconductor region. The MIS structure includes a gate electrode that faces a portion of a surface of the first semiconductor region with a gate insulating membrane therebetween. The heterostructure includes a second semiconductor region which makes contact with a rest portion of the surface of the first semiconductor region and has a wider band-gap than the first semiconductor region. The drain region and the source region are capable of being electrically connected with a structure in which the MIS structure 40 and the heterostructure are arranged in series.
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