发明申请
US20080149884A1 Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
审中-公开
在化学机械抛光过程中调节低k对铜去除率的方法和浆料
- 专利标题： Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
- 专利标题（中）： 在化学机械抛光过程中调节低k对铜去除率的方法和浆料
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申请号： US11643519申请日： 2006-12-21
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公开(公告)号： US20080149884A1公开(公告)日： 2008-06-26
- 发明人: Junaid Ahmed Siddiqui , Rachel Dianne McConnell , Saifi Usmani
- 申请人： Junaid Ahmed Siddiqui , Rachel Dianne McConnell , Saifi Usmani
- 主分类号： C09K13/00
- IPC分类号： C09K13/00 ; B24B1/00 ; H01L21/00
摘要：
A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films.
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