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    Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
    1.
    发明申请
    Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing 审中-公开
    在化学机械抛光过程中调节低k对铜去除率的方法和浆料

    公开(公告)号：US20080149884A1

    公开(公告)日：2008-06-26

    申请号：US11643519

    申请日：2006-12-21

    申请人： Junaid Ahmed Siddiqui ,  Rachel Dianne McConnell ,  Saifi Usmani

    发明人： Junaid Ahmed Siddiqui ,  Rachel Dianne McConnell ,  Saifi Usmani

    IPC分类号： C09K13/00 ,  B24B1/00 ,  H01L21/00

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31053

    摘要： A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films.

    摘要翻译： 描述了用于半导体晶片上的金属衬底的化学机械平坦化（CMP）的组合物和相关方法。 该组合物含有非离子型氟碳表面活性剂和每种类型的氧化剂（例如过氧化氢）。 该组合物和相关方法在控制铜CMP期间低k膜的去除速率方面是有效的，并且提供了关于铜，钽和氧化物膜去除率的低k膜去除率的调谐能力。

    Method and Slurry for Tuning Low-K Versus Copper Removal Rates During Chemical Mechanical Polishing
    3.
    发明申请
    Method and Slurry for Tuning Low-K Versus Copper Removal Rates During Chemical Mechanical Polishing 审中-公开
    化学机械抛光过程中调低低K对铜去除率的方法和浆料

    公开(公告)号：US20110165777A1

    公开(公告)日：2011-07-07

    申请号：US13052457

    申请日：2011-03-21

    申请人： Junaid Ahmed Siddiqui ,  Rachel Dianne McConnell ,  Saifi Usmani

    发明人： Junaid Ahmed Siddiqui ,  Rachel Dianne McConnell ,  Saifi Usmani

    IPC分类号： H01L21/304 ,  C09K13/00

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31053

    摘要： A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films.

    摘要翻译： 描述了用于半导体晶片上的金属衬底的化学机械平坦化（CMP）的组合物和相关方法。 该组合物含有非离子型氟碳表面活性剂和每种类型的氧化剂（例如过氧化氢）。 该组合物和相关方法在控制铜CMP期间低k膜的去除速率方面是有效的，并且提供了关于铜，钽和氧化物膜去除率的低k膜去除率的调谐能力。

    Method for chemical mechanical planarization of chalcogenide materials
    4.
    发明授权
    Method for chemical mechanical planarization of chalcogenide materials 有权
    硫族化物材料的化学机械平面化方法

    公开(公告)号：US07915071B2

    公开(公告)日：2011-03-29

    申请号：US12193303

    申请日：2008-08-18

    申请人： Junaid Ahmed Siddiqui ,  Saifi Usmani

    发明人： Junaid Ahmed Siddiqui ,  Saifi Usmani

    IPC分类号： H01L21/00

    CPC分类号： C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1683

    摘要： A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

    摘要翻译： 描述了含硫族化物的衬底（例如，含锗/锑（碲（GST））衬底的化学机械平面化的方法和相关组合物）。 组合物和方法在CMP处理期间提供低缺陷水平（例如抛光期间产生的划痕）以及含硫属化物的衬底的低凹陷和局部侵蚀水平。

    Method for Chemical Mechanical Planarization of Chalcogenide Materials
    5.
    发明申请
    Method for Chemical Mechanical Planarization of Chalcogenide Materials 有权
    硫族化物材料化学机械平面化方法

    公开(公告)号：US20090057661A1

    公开(公告)日：2009-03-05

    申请号：US12193303

    申请日：2008-08-18

    申请人： Junaid Ahmed Siddiqui ,  Saifi Usmani

    发明人： Junaid Ahmed Siddiqui ,  Saifi Usmani

    IPC分类号： H01L21/306 ,  H01L29/12

    CPC分类号： C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1683

    摘要： A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

    摘要翻译： 描述了含硫族化物的衬底（例如，含锗/锑（碲（GST））衬底的化学机械平面化的方法和相关组合物）。 组合物和方法在CMP处理期间提供低缺陷水平（例如抛光期间产生的划痕）以及含硫属化物的衬底的低凹陷和局部侵蚀水平。

    Method to passivate conductive surfaces during semiconductor processing
    7.
    发明授权
    Method to passivate conductive surfaces during semiconductor processing 失效
    在半导体加工过程中钝化导电表面的方法

    公开(公告)号：US07188630B2

    公开(公告)日：2007-03-13

    申请号：US10431053

    申请日：2003-05-07

    申请人： John C. Flake ,  Kevin E. Cooper ,  Saifi Usmani

    发明人： John C. Flake ,  Kevin E. Cooper ,  Saifi Usmani

    IPC分类号： B08B6/00 ,  C25F1/00 ,  C25F3/30 ,  C25F5/00

    CPC分类号： C11D3/28 ,  C11D1/146 ,  C11D1/345 ,  C11D1/62 ,  C11D1/72 ,  C11D3/0073 ,  C11D3/2003 ,  C11D3/382 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

    摘要： A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The solution can be applied during a CMP process or during a post CMP cleaning process. The solution may include a surfactant and a corrosion inhibitor. In one embodiment, the concentration of the surfactant in the solution is less than approximately one percent by weight and the concentration of the corrosion inhibitor in the solution is less than approximately one percent by weight. The solution may also include a solvent and a cosolvent. In an alternate embodiment, the solution includes a solvent and a cosolvent without the surfactant and corrosion inhibitor. In one embodiment, the CMP process and post CMP cleaning process can be performed in the presence of light having a wavelength of less than approximately one micron.

    摘要翻译： 公开了一种处理半导体晶片的方法。 将解决方案应用于半导体晶片以防止金属互连表面处的枝晶和电解反应。 该解决方案可以在CMP过程中或CMP后清洗过程中应用。 溶液可以包括表面活性剂和腐蚀抑制剂。 在一个实施方案中，溶液中表面活性剂的浓度小于约1重量％，并且溶液中腐蚀抑制剂的浓度小于约1重量％。 溶液还可以包括溶剂和助溶剂。 在另一个实施方案中，溶液包括溶剂和没有表面活性剂和腐蚀抑制剂的助溶剂。 在一个实施例中，可以在具有小于约一微米的波长的光的存在下执行CMP工艺和后CMP清洁工艺。

    Method to passivate conductive surfaces during semiconductor processing
    8.
    发明授权
    Method to passivate conductive surfaces during semiconductor processing 有权
    在半导体加工过程中钝化导电表面的方法

    公开(公告)号：US07579279B2

    公开(公告)日：2009-08-25

    申请号：US11670176

    申请日：2007-02-01

    申请人： John C. Flake ,  Kevin E. Cooper ,  Saifi Usmani

    发明人： John C. Flake ,  Kevin E. Cooper ,  Saifi Usmani

    IPC分类号： H01L21/461 ,  H01L21/302

    CPC分类号： C11D3/28 ,  C11D1/146 ,  C11D1/345 ,  C11D1/62 ,  C11D1/72 ,  C11D3/0073 ,  C11D3/2003 ,  C11D3/382 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

    摘要： A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The solution can be applied during a CMP process or during a post CMP cleaning process. The solution may include a surfactant and a corrosion inhibitor. In one embodiment, the concentration of the surfactant in the solution is less than approximately one percent by weight and the concentration of the corrosion inhibitor in the solution is less than approximately one percent by weight. The solution may also include a solvent and a cosolvent. In an alternate embodiment, the solution includes a solvent and a cosolvent without the surfactant and corrosion inhibitor. In one embodiment, the CMP process and post CMP cleaning process can be performed in the presence of light having a wavelength of less than approximately one micron.

    摘要翻译： 公开了一种处理半导体晶片的方法。 将解决方案应用于半导体晶片以防止金属互连表面处的枝晶和电解反应。 该解决方案可以在CMP过程中或CMP后清洗过程中应用。 溶液可以包括表面活性剂和腐蚀抑制剂。 在一个实施方案中，溶液中表面活性剂的浓度小于约1重量％，并且溶液中腐蚀抑制剂的浓度小于约1重量％。 溶液还可以包括溶剂和助溶剂。 在另一个实施方案中，溶液包括溶剂和没有表面活性剂和腐蚀抑制剂的助溶剂。 在一个实施例中，可以在具有小于约一微米的波长的光的存在下执行CMP工艺和后CMP清洁工艺。

    METHOD TO PASSIVATE CONDUCTIVE SURFACES DURING SEMICONDUCTOR PROCESSING
    9.
    发明申请
    METHOD TO PASSIVATE CONDUCTIVE SURFACES DURING SEMICONDUCTOR PROCESSING 有权
    在半导体加工过程中钝化导电表面的方法

    公开(公告)号：US20080038994A1

    公开(公告)日：2008-02-14

    申请号：US11670176

    申请日：2007-02-01

    申请人： John Flake ,  Kevin Cooper ,  Saifi Usmani

    发明人： John Flake ,  Kevin Cooper ,  Saifi Usmani

    IPC分类号： B24B7/04 ,  B24B29/00 ,  C09K13/00

    CPC分类号： C11D3/28 ,  C11D1/146 ,  C11D1/345 ,  C11D1/62 ,  C11D1/72 ,  C11D3/0073 ,  C11D3/2003 ,  C11D3/382 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

    摘要： A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The solution can be applied during a CMP process or during a post CMP cleaning process. The solution may include a surfactant and a corrosion inhibitor. In one embodiment, the concentration of the surfactant in the solution is less than approximately one percent by weight and the concentration of the corrosion inhibitor in the solution is less than approximately one percent by weight. The solution may also include a solvent and a cosolvent. In an alternate embodiment, the solution includes a solvent and a cosolvent without the surfactant and corrosion inhibitor. In one embodiment, the CMP process and post CMP cleaning process can be performed in the presence of light having a wavelength of less than approximately one micron.

    摘要翻译： 公开了一种处理半导体晶片的方法。 将解决方案应用于半导体晶片以防止金属互连表面处的枝晶和电解反应。 该解决方案可以在CMP过程中或CMP后清洗过程中应用。 溶液可以包括表面活性剂和腐蚀抑制剂。 在一个实施方案中，溶液中表面活性剂的浓度小于约1重量％，并且溶液中腐蚀抑制剂的浓度小于约1重量％。 溶液还可以包括溶剂和助溶剂。 在另一个实施方案中，溶液包括溶剂和没有表面活性剂和腐蚀抑制剂的助溶剂。 在一个实施例中，可以在具有小于约一微米的波长的光的存在下执行CMP工艺和后CMP清洁工艺。