发明申请
US20080149919A1 Structure and Method For Realizing a Microelectronic Device Provided With a Number of Quantum Wires Capable of Forming One or More Transistor Channels
有权
用于实现具有能够形成一个或多个晶体管通道的量子线数量的微电子器件的结构和方法
- 专利标题： Structure and Method For Realizing a Microelectronic Device Provided With a Number of Quantum Wires Capable of Forming One or More Transistor Channels
- 专利标题（中）： 用于实现具有能够形成一个或多个晶体管通道的量子线数量的微电子器件的结构和方法
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申请号： US11910802申请日： 2006-04-10
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公开(公告)号： US20080149919A1公开(公告)日： 2008-06-26
- 发明人: Thomas Ernst , Stephan Borel
- 申请人： Thomas Ernst , Stephan Borel
- 申请人地址： FR Paris
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人地址： FR Paris
- 优先权： FR0550947 20050413
- 国际申请： PCT/FR2006/050322 WO 20060410
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/336
摘要：
A microelectronic device provided with one or more quantum wires, able to form one or more transistor channels, and optimized in terms of arrangement, shape, and/or composition. A method for fabricating the device includes forming, in one or more thin layers resting on a support, a first block and a second block in which at least one transistor drain region and at least one transistor source region are respectively intended to be formed, forming a structure connecting the first block to the second block, and forming, on the surface of the structure, wires connecting a first region of the first block with another region of the second block that faces the first region.
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