发明申请
- 专利标题： INTEGRATED CIRCUIT SYSTEM WITH MEMORY SYSTEM
- 专利标题（中）： 具有存储器系统的集成电路系统
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申请号： US11958254申请日： 2007-12-17
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公开(公告)号： US20080150042A1公开(公告)日： 2008-06-26
- 发明人: Simon Siu-Sing Chan , Hidehiko Shiraiwa , Kuo-Tung Chang , Angela T. Hui
- 申请人： Simon Siu-Sing Chan , Hidehiko Shiraiwa , Kuo-Tung Chang , Angela T. Hui
- 申请人地址： US CA Sunnyvale US CA Sunnyvale
- 专利权人： SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- 当前专利权人： SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- 当前专利权人地址： US CA Sunnyvale US CA Sunnyvale
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/44
摘要：
A method for forming an integrated circuit system is provided including forming a memory section having a spacer with a substrate, forming an outer doped region of the memory section in the substrate, forming a barrier metal layer over the spacer, and forming a metal plug over the outer doped region and the barrier metal layer.
公开/授权文献
- US08114736B2 Integrated circuit system with memory system 公开/授权日：2012-02-14
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