发明申请
- 专利标题: INTEGRATED CIRCUIT INCLUDING A CHARGE COMPENSATION COMPONENT
- 专利标题(中): 集成电路,包括电荷补偿组件
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申请号: US11961235申请日: 2007-12-20
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公开(公告)号: US20080150073A1公开(公告)日: 2008-06-26
- 发明人: Armin Willmeroth , Anton Mauder , Stefan Sedlmaier
- 申请人: Armin Willmeroth , Anton Mauder , Stefan Sedlmaier
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 优先权: DE102006061994.3 20061221
- 主分类号: H01L29/00
- IPC分类号: H01L29/00 ; H01L21/20
摘要:
A charge compensation component having a drift path between two electrodes, an electrode and a counterelectrode, and methods for producing the same. The drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type with respect to the first conduction type. A drift path layer doping comprising the volume integral of the doping locations of a horizontal drift path layer of the vertically extending drift path including the drift zone regions and charge compensation zone regions arranged in the drift path layer is greater in the vicinity of the electrodes than in the direction of the centre of the drift path.
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