公开(公告)号：US08461648B2

公开(公告)日：2013-06-11

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/732

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

公开(公告)号：US20110101451A1

公开(公告)日：2011-05-05

申请号：US12984934

申请日：2011-01-05

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Ralf Erichsen ,  Hans Weber ,  Oliver Haeberlen ,  Franz Hirler

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Ralf Erichsen ,  Hans Weber ,  Oliver Haeberlen ,  Franz Hirler

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L27/0629 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7804

摘要： A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described.

摘要翻译： 描述了具有半导体本体的半导体部件，该半导体本体具有第一和第二侧面，边缘和与横向方向上的边缘相邻的边缘区域。

公开(公告)号：US20090130806A1

公开(公告)日：2009-05-21

申请号：US12350776

申请日：2009-01-08

申请人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

发明人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

IPC分类号： H01L21/336

CPC分类号： H01L29/7811 ,  H01L21/2205 ,  H01L21/2252 ,  H01L21/2255 ,  H01L23/291 ,  H01L23/298 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.

摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。

公开(公告)号：US20130248993A1

公开(公告)日：2013-09-26

申请号：US13429525

申请日：2012-03-26

申请人： Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Johannes Baumgartl ,  Anton Mauder ,  Ralf Siemieniec ,  Oliver Blank ,  Michael Hutzler

发明人： Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Johannes Baumgartl ,  Anton Mauder ,  Ralf Siemieniec ,  Oliver Blank ,  Michael Hutzler

IPC分类号： H01L27/088 ,  H01L21/283 ,  H01L29/78

CPC分类号： H01L29/407 ,  H01L21/765 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/515 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7843

摘要： A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body. The vertical trench includes a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. Further, a method for producing a field-effect semiconductor device is provided.

摘要翻译： 提供场效应半导体器件。 场效应半导体器件包括具有限定垂直方向的第一表面的半导体本体。 在垂直截面中，场效应半导体器件还包括从第一表面延伸到半导体本体中的垂直沟槽。 垂直沟槽包括场电极，至少部分地被场电极包围的空腔以及至少基本上围绕场电极的绝缘结构。 此外，提供了一种用于制造场效应半导体器件的方法。

公开(公告)号：US08110868B2

公开(公告)日：2012-02-07

申请号：US11435979

申请日：2006-05-17

申请人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.

摘要翻译： 公开了一种具有半导体本体的半导体部件。 在一个实施例中，半导体部件包括第一导电类型的漂移区，由半导体材料构成的漂移控制区，该半导体材料至少位于与漂移区相邻的位置处，布置在漂移区和 漂移控制区至少在地方。 漂移控制区的净掺杂剂电荷在与积聚电介质和漂移区相邻的区域除以布置在漂移控制区和漂移区之间的介质的面积除以小于 漂移控制区中的半导体材料。

公开(公告)号：US07943449B2

公开(公告)日：2011-05-17

申请号：US12241828

申请日：2008-09-30

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Ralf Erichsen ,  Hans Weber ,  Oliver Haeberlen ,  Franz Hirler

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Ralf Erichsen ,  Hans Weber ,  Oliver Haeberlen ,  Franz Hirler

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L27/0629 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7804

摘要： A method for producing a semiconductor structure and a semiconductor component are described.

摘要翻译： 对半导体结构体及半导体部件的制造方法进行说明。

公开(公告)号：US07709891B2

公开(公告)日：2010-05-04

申请号：US12019271

申请日：2008-01-24

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Franz Hirler ,  Armin Willmeroth ,  Gerhard Noebauer

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Franz Hirler ,  Armin Willmeroth ,  Gerhard Noebauer

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7831 ,  H03K17/04206 ,  H03K17/063 ,  H03K17/567

摘要： A component arrangement. One embodiment includes a power semiconductor component having a drift zone arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. A capacitive storage arrangement is coupled to the drift control zone. A charging circuit is coupled between the first component zone and the capacitive storage arrangement.

摘要翻译： 组件安排。 一个实施例包括具有布置在第一和第二组件区之间的漂移区的功率半导体组件。 漂移控制区域布置成与漂移区相邻并且通过介电层与漂移区介电绝缘。 电容存储装置耦合到漂移控制区。 充电电路耦合在第一组件区域和电容存储装置之间。

公开(公告)号：US20080150073A1

公开(公告)日：2008-06-26

申请号：US11961235

申请日：2007-12-20

申请人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/00 ,  H01L21/20

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7813

摘要： A charge compensation component having a drift path between two electrodes, an electrode and a counterelectrode, and methods for producing the same. The drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type with respect to the first conduction type. A drift path layer doping comprising the volume integral of the doping locations of a horizontal drift path layer of the vertically extending drift path including the drift zone regions and charge compensation zone regions arranged in the drift path layer is greater in the vicinity of the electrodes than in the direction of the centre of the drift path.

摘要翻译： 具有两个电极之间的漂移路径的电荷补偿组件，电极和反电极及其制造方法。 漂移路径具有第一导电类型的漂移区和相对于第一导电类型的互补导电类型的电荷补偿区。 包括垂直延伸的漂移路径的水平漂移路径层的掺杂位置的体积积分的漂移路径层掺杂包括布置在漂移路径层中的漂移区域和电荷补偿区域在电极附近较大， 在漂移路径的中心方向。

公开(公告)号：US20070108513A1

公开(公告)日：2007-05-17

申请号：US11540922

申请日：2006-09-29

申请人： Michael Rub ,  Herbert Schafer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

发明人： Michael Rub ,  Herbert Schafer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

IPC分类号： H01L31/00

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7849

摘要： The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.

摘要翻译： 公开了具有半导体主体的半导体部件的制造，其中布置有具有在垂直方向上延伸并且非常深地延伸到半导体本体中的截面的非常薄的电介质层。 在一种方法中，在从半导体主体的前侧开始的漂移区域中形成沟槽，在沟槽的至少一部分侧壁上产生牺牲层，并且沟槽的至少一部分填充有 半导体材料被选择为使得沟槽中的半导体材料的净掺杂剂电荷的商和半导体材料和漂移区域之间的沟槽的侧壁上的牺牲层的总面积小于击穿电荷 的半导体材料，并且牺牲层被电介质代替。

公开(公告)号：US08907408B2

公开(公告)日：2014-12-09

申请号：US13429525

申请日：2012-03-26

申请人： Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Johannes Baumgartl ,  Anton Mauder ,  Ralf Siemieniec ,  Oliver Blank ,  Michael Hutzler

发明人： Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Johannes Baumgartl ,  Anton Mauder ,  Ralf Siemieniec ,  Oliver Blank ,  Michael Hutzler

IPC分类号： H01L29/66

CPC分类号： H01L29/407 ,  H01L21/765 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/515 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7843

摘要： A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body. The vertical trench includes a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. Further, a method for producing a field-effect semiconductor device is provided.

摘要翻译： 提供场效应半导体器件。 场效应半导体器件包括具有限定垂直方向的第一表面的半导体本体。 在垂直截面中，场效应半导体器件还包括从第一表面延伸到半导体本体中的垂直沟槽。 垂直沟槽包括场电极，至少部分地被场电极包围的空腔以及至少基本上围绕场电极的绝缘结构。 此外，提供了一种用于制造场效应半导体器件的方法。