发明申请
- 专利标题: Semiconductor Device
- 专利标题(中): 半导体器件
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申请号: US11815084申请日: 2006-04-07
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公开(公告)号: US20080150115A1公开(公告)日: 2008-06-26
- 发明人: Yuji Watanabe , Koji Hosokawa , Hisashi Tanie
- 申请人: Yuji Watanabe , Koji Hosokawa , Hisashi Tanie
- 申请人地址: JP Tokyo
- 专利权人: ELPIDA MEMORY INC.
- 当前专利权人: ELPIDA MEMORY INC.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2005-113413 20050411
- 国际申请: PCT/JP2006/307871 WO 20060407
- 主分类号: H01L23/488
- IPC分类号: H01L23/488
摘要:
An electronic component such as a semiconductor device is provided which is capable of preventing wiring breakage in a stress concentration region of surface layer wiring lines. In a semiconductor device provided with a support ball (5), no ordinary wiring line is formed in a region (7(A)) in the vicinity of the support ball (5) and a region (7(B)) at the end of the semiconductor chip facing the support ball (5), which are the stress concentration regions of the package substrate (2). Instead, a wiring line (6(C)) is formed away from these regions or a wide wiring line is formed in these regions.
公开/授权文献
- US07659623B2 Semiconductor device having improved wiring 公开/授权日:2010-02-09
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