发明申请
- 专利标题: Microwave Transmission Line Integrated Microwave Generating Element and Microwave Transmission Line Integrated Microwave Detecting Element
- 专利标题(中): 微波传输线集成微波发生元件和微波传输线集成微波检测元件
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申请号: US11886083申请日: 2006-03-17
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公开(公告)号: US20080150643A1公开(公告)日: 2008-06-26
- 发明人: Yoshishige Suzuki , Shinji Yuasa , Akio Fukushima , Ashwin Tulapurkar
- 申请人: Yoshishige Suzuki , Shinji Yuasa , Akio Fukushima , Ashwin Tulapurkar
- 优先权: JP2005-080043 20050318; JP2006-069533 20060314
- 国际申请: PCT/JP2006/305379 WO 20060317
- 主分类号: H03B15/00
- IPC分类号: H03B15/00 ; H01L43/08 ; H01Q23/00
摘要:
Microwave generating and detection portions of a electronic circuit is improved in efficiency and reduced in size. A microwave generating element A comprises a lower electrode 1, a layer 3 formed on the lower electrode 1 in an island shape, forming a magnetoresistance element, an insulator 7 formed on the lower electrode 1 in such a manner as to surround the layer 3 forming the magnetoresistance element, and an upper electrode 5 formed on the insulator 7 and the layer 3 forming the magnetoresistance element. The layer 3 forming the magnetoresistance element includes, in order from the side of the lower electrode 1, a magnetization fixed layer 3a, an intermediate layer 3b, and a magnetization free layer 3c. The magnetization free layer 3c, which is required to produce resonance oscillation based on a current, preferably is dimensioned to be equal to or smaller than 200 nm square in a cross-sectional area and on the order of 1 to 5 nm in film thickness, for example. The magnetization fixed layer 3a, when made of a single material, is required to have a thickness 10 times or more of the thickness of the magnetization free layer 3c. The magnetization fixed layer 3a may be comprised of a magnetic metal multilayer film that utilizes antiferromagnetic coupling.
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