发明申请
- 专利标题： Interferometric endpoint determination in a substrate etching process
- 专利标题（中）： 基板蚀刻工艺中的干涉测量端点测定
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申请号： US11953853申请日： 2007-12-10
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公开(公告)号： US20080151237A1公开(公告)日： 2008-06-26
- 发明人: Lei Lian , Matthew F. Davis
- 申请人： Lei Lian , Matthew F. Davis
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： G01J3/00
- IPC分类号： G01J3/00 ; G01N21/55 ; G01B9/02
摘要：
In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.
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