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    WITHIN-SEQUENCE METROLOGY BASED PROCESS TUNING FOR ADAPTIVE SELF-ALIGNED DOUBLE PATTERNING
    1.
    发明申请
    WITHIN-SEQUENCE METROLOGY BASED PROCESS TUNING FOR ADAPTIVE SELF-ALIGNED DOUBLE PATTERNING 失效
    用于自适应自对准双向图案的基于量子的方法调整

    公开(公告)号：US20100009470A1

    公开(公告)日：2010-01-14

    申请号：US12172106

    申请日：2008-07-11

    申请人： Matthew F. Davis ,  Thorsten B. Lill ,  Lei Lian

    发明人： Matthew F. Davis ,  Thorsten B. Lill ,  Lei Lian

    IPC分类号： H01L21/00 ,  C23F1/00

    CPC分类号： H01L21/67207 ,  B82Y10/00 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An apparatus for adaptive self-aligned dual patterning and method thereof. The method includes providing a substrate to a processing platform configured to perform an etch process and a deposition process and a metrology unit configured for in-vacuo critical dimension (CD) measurement. The in-vacuo CD measurement is utilized for feedforward adaptive control of the process sequence processing platform or for feedback and feedforward adaptive control of chamber process parameters. In one aspect, a first layer of a multi-layered masking stack is etched to form a template mask, an in-vacuo CD measurement of the template mask is made, and a spacer is formed, adjacent to the template mask, to a width that is dependent on the CD measurement of the template mask.

    摘要翻译： 一种用于自适应自对准双重图案化的装置及其方法。 该方法包括向被配置为执行蚀刻工艺和沉积工艺的处理平台提供衬底以及配置用于真空临界尺寸（CD）测量）的测量单元。 真空CD测量用于过程序列处理平台的前馈自适应控制或者用于反馈和前馈自适应控制室工艺参数。 在一个方面，蚀刻多层掩模叠层的第一层以形成模板掩模，制成模板掩模的真空中的CD测量，并且将与模板掩模相邻的间隔物形成为宽度 这取决于模板掩码的CD测量。

    Within-sequence metrology based process tuning for adaptive self-aligned double patterning
    3.
    发明授权
    Within-sequence metrology based process tuning for adaptive self-aligned double patterning 失效
    用于自适应自对准双重图案的基于序列测量的过程调整

    公开(公告)号：US08232212B2

    公开(公告)日：2012-07-31

    申请号：US12172106

    申请日：2008-07-11

    申请人： Matthew F. Davis ,  Thorsten B. Lill ,  Lei Lian

    发明人： Matthew F. Davis ,  Thorsten B. Lill ,  Lei Lian

    IPC分类号： H01L21/302

    CPC分类号： H01L21/67207 ,  B82Y10/00 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An apparatus for adaptive self-aligned dual patterning and method thereof. The method includes providing a substrate to a processing platform configured to perform an etch process and a deposition process and a metrology unit configured for in-vacuo critical dimension (CD) measurement. The in-vacuo CD measurement is utilized for feedforward adaptive control of the process sequence processing platform or for feedback and feedforward adaptive control of chamber process parameters. In one aspect, a first layer of a multi-layered masking stack is etched to form a template mask, an in-vacuo CD measurement of the template mask is made, and a spacer is formed, adjacent to the template mask, to a width that is dependent on the CD measurement of the template mask.

    摘要翻译： 一种用于自适应自对准双重图案化的装置及其方法。 该方法包括向被配置为执行蚀刻工艺和沉积工艺的处理平台提供衬底以及配置用于真空临界尺寸（CD）测量）的测量单元。 真空CD测量用于过程序列处理平台的前馈自适应控制或者用于反馈和前馈自适应控制室工艺参数。 在一个方面，蚀刻多层掩模叠层的第一层以形成模板掩模，制成模板掩模的真空中的CD测量，并且将与模板掩模相邻的间隔物形成为宽度 这取决于模板掩码的CD测量。

    Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring
    4.
    发明授权
    Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring 失效
    通过综合等离子体监测自动确定半导体等离子体室匹配和故障源的方法

    公开(公告)号：US07169625B2

    公开(公告)日：2007-01-30

    申请号：US10628001

    申请日：2003-07-25

    申请人： Matthew F. Davis ,  Lei Lian

    发明人： Matthew F. Davis ,  Lei Lian

    IPC分类号： H01L21/00

    CPC分类号： H01J37/32174 ,  G01N21/73 ,  H01J37/32935 ,  H01J37/32972

    摘要： A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal component analysis then is performed on the measured correlated attributes so as to generate steady principal components and transitional principal components; and these principal components are compared to reference principal components associated with a reference chamber. The process used for calibration includes a regular plasma process followed by a process perturbation of one process parameter. Similar process perturbation runs are conducted several times to include different perturbation parameters. By performing inner products of the principal components of chamber under study and the reference chamber, matching scores can be reached. Automatic chamber matching can be determined by comparing these scores with preset control limits. The potential source(s) of chamber fault can also be identified by the lowest matching score(s).

    摘要翻译： 提供了一种用于自动确定匹配故障源的半导体等离子体室的方法和装置。 测量在研究室和参考室中用于校准的过程的相关等离子体属性。 然后对测量的相关属性进行主成分分析，以产生稳定的主成分和过渡主成分; 并且将这些主要部件与与参考室相关联的参考主要部件进行比较。 用于校准的过程包括常规等离子体处理，随后是一个过程参数的过程扰动。 进行几次相似的过程扰动运行，以包括不同的扰动参数。 通过执行正在研究的室的主要成分和参考室的内部产物，可以达到匹配分数。 可以通过将这些分数与预设的控制限制进行比较来确定自动室匹配。 室故障的潜在来源也可以通过最低匹配得分识别。

    Determining endpoint in a substrate process
    6.
    发明授权
    Determining endpoint in a substrate process 有权
    确定底物过程中的终点

    公开(公告)号：US07808651B2

    公开(公告)日：2010-10-05

    申请号：US12688840

    申请日：2010-01-15

    申请人： Lei Lian ,  Matthew F Davis

    发明人： Lei Lian ,  Matthew F Davis

    IPC分类号： G01B11/02

    CPC分类号： H01J37/32935 ,  G01B11/0675 ,  G01B11/0683 ,  H01J37/32963

    摘要： An endpoint detection system for detecting an endpoint of a process comprises a polychromatic light source which emits polychromatic light. The light is reflected from a substrate. A light wavelength selector receives the reflected polychromatic light and determines a wavelength of light at which a local intensity of the reflected light is maximized during the process. In one version, the wavelength selector comprises a diffraction grating to generate a plurality of light beams having different wavelengths from the reflected polychromatic light and a light detector to receive the light beams having different wavelengths and generate an intensity signal trace of the intensity of each wavelength of the polychromatic reflected light.

    摘要翻译： 用于检测过程的端点的端点检测系统包括发出多色光的多色光源。 光从基底反射。 光波长选择器接收反射的多色光并确定在该过程中反射光的局部强度最大化的光的波长。 在一个版本中，波长选择器包括衍射光栅以产生与反射的多色光不同的波长的多个光束，以及光检测器，用于接收具有不同波长的光束，并且产生每个波长的强度的强度信号迹线 的多色反射光。

    Interferometric endpoint determination in a substrate etching process
    7.
    发明申请
    Interferometric endpoint determination in a substrate etching process 失效
    基板蚀刻工艺中的干涉测量端点测定

    公开(公告)号：US20080151237A1

    公开(公告)日：2008-06-26

    申请号：US11953853

    申请日：2007-12-10

    申请人： Lei Lian ,  Matthew F. Davis

    发明人： Lei Lian ,  Matthew F. Davis

    IPC分类号： G01J3/00 ,  G01N21/55 ,  G01B9/02

    CPC分类号： H01J37/32935 ,  G01B11/0675 ,  G01B11/0683 ,  H01J37/32963

    摘要： In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

    摘要翻译： 在确定蚀刻衬底的端点时，指向衬底的光从衬底反射。 选择光的波长以在蚀刻处理的初始时间点局部地最大化反射光的强度。 检测反射光以确定基板蚀刻工艺的端点。

    Interferometric endpoint determination in a substrate etching process
    8.
    发明授权
    Interferometric endpoint determination in a substrate etching process 失效
    基板蚀刻工艺中的干涉测量端点测定

    公开(公告)号：US07306696B2

    公开(公告)日：2007-12-11

    申请号：US10286402

    申请日：2002-11-01

    申请人： Lei Lian ,  Matthew F. Davis

    发明人： Lei Lian ,  Matthew F. Davis

    IPC分类号： H01L21/3065 ,  C23C16/00 ,  C23C14/00

    CPC分类号： H01J37/32935 ,  G01B11/0675 ,  G01B11/0683 ,  H01J37/32963

    摘要： In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

    摘要翻译： 在确定蚀刻衬底的端点时，指向衬底的光从衬底反射。 选择光的波长以在蚀刻处理的初始时间点局部地最大化反射光的强度。 检测反射光以确定基板蚀刻工艺的端点。

    Method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber
    10.
    发明授权
    Method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber 有权
    设置在真空处理室中的工件的原位测量方法和装置

    公开(公告)号：US08274645B2

    公开(公告)日：2012-09-25

    申请号：US12506155

    申请日：2009-07-20

    申请人： Matthew F. Davis ,  Lei Lian ,  Thorsten B. Lill

    发明人： Matthew F. Davis ,  Lei Lian ,  Thorsten B. Lill

    IPC分类号： G01N21/00

    CPC分类号： G03F7/70625 ,  G01B2210/56

    摘要： A method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber. The apparatus may include an optical assembly external to the processing chamber configured to focus a relatively large optical spot over a relatively large working distance to acquire a TE and TM spectra from a periodic array on the workpiece. The workpiece may be disposed in the processing chamber with an arbitrary orientation which is first determined via a reflectance measurement. TE and/or TM spectra may then be acquired by initiating a periodic triggering of a flash lamp based on the determined workpiece orientation to account for variation in placement of the workpiece within the processing chamber. The periodic array from which spectra are collected may be a memory array being fabricated in a semiconductor wafer.

    摘要翻译： 一种用于原位计量的设置在真空处理室中的工件的方法和装置。 该设备可以包括处理室外部的光学组件，其配置成在相对大的工作距离上聚焦相对较大的光点，以从工件上的周期性阵列获取TE和TM光谱。 工件可以以任意取向设置在处理室中，该取向首先通过反射测量确定。 然后可以通过基于所确定的工件取向启动闪光灯的周期性触发来获取TE和/或TM光谱，以考虑工件在处理室内的放置变化。 收集光谱的周期性阵列可以是在半导体晶片中制造的存储器阵列。