发明申请
- 专利标题： INTEGRATED CIRCUIT SYSTEM WITH MEMORY SYSTEM
- 专利标题（中）： 具有存储器系统的集成电路系统
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申请号： US11735229申请日： 2007-04-13
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公开(公告)号： US20080153224A1公开(公告)日： 2008-06-26
- 发明人: Connie Pin Chin Wang , Simon Siu-Sing Chan , Angela T. Hui , Paul R. Besser , Shenqing Fang
- 申请人： Connie Pin Chin Wang , Simon Siu-Sing Chan , Angela T. Hui , Paul R. Besser , Shenqing Fang
- 申请人地址： US CA Sunnyvale US CA Sunnyvale
- 专利权人： SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- 当前专利权人： SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- 当前专利权人地址： US CA Sunnyvale US CA Sunnyvale
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
An integrated circuit system is provided including forming a memory section having a spacer with a substrate, forming an outer doped region of the memory section in the substrate, forming a contact on the outer doped region, thinning the contact for forming a thinned contact, and forming a metal plug on the thinned contact.
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IPC分类:
