发明申请
- 专利标题: METHOD AND APPARATUS FOR WAFER EDGE PROCESSING
- 专利标题(中): WAF边缘加工方法与装置
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申请号: US11618572申请日: 2006-12-29
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公开(公告)号: US20080156772A1公开(公告)日: 2008-07-03
- 发明人: Yunsang Kim , Jack Chen , Grace Fang , Andrew Bailey
- 申请人: Yunsang Kim , Jack Chen , Grace Fang , Andrew Bailey
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; C23F1/02
摘要:
Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source gas may be employed and/or the RF bias power may be ramped up gradually during plasma generation to alleviate arc-related damage during bevel etching. Also additionally or alternatively, helium and/or hydrogen may be added to the process source gas to alleviate arc-related damage during bevel etching.
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