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    Low-K damage avoidance during bevel etch processing
    3.
    发明授权
    Low-K damage avoidance during bevel etch processing 有权
    斜角蚀刻加工期间的低K损伤避免

    公开(公告)号：US08500951B2

    公开(公告)日：2013-08-06

    申请号：US12730146

    申请日：2010-03-23

    申请人： Yunsang Kim ,  Andrew Bailey, III ,  Jack Chen

    发明人： Yunsang Kim ,  Andrew Bailey, III ,  Jack Chen

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/02041 ,  H01L21/02087 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/6833

    摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.

    摘要翻译： 提供了蚀刻基板的斜边缘的方法。 在蚀刻层上形成图案化的光致抗蚀剂掩模。 清洁斜面边缘，包括提供包括CO 2，CO，C x H y，H 2，NH 3，C x H y Fz及其组合中的至少一种的清洁气体，从清洁气体形成清洁等离子体，并将斜面边缘暴露于清洁等离子体 。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

    Compounds - 801
    4.
    发明申请
    Compounds - 801 有权
    化合物 - 801

    公开(公告)号：US20130018037A1

    公开(公告)日：2013-01-17

    申请号：US13617978

    申请日：2012-09-14

    申请人： Lilian Alcaraz ,  Andrew Bailey ,  Nicholas Kindon

    发明人： Lilian Alcaraz ,  Andrew Bailey ,  Nicholas Kindon

    IPC分类号： C07D498/10 ,  A61P29/00 ,  A61P11/00 ,  A61K31/5386

    CPC分类号： C07D498/10 ,  C07D519/00

    摘要： Spirocyclic amide derivatives of formula I wherein ArCH2CH2NH— represents a β-adrenoceptor binding group, processes for their preparation, pharmaceutical compositions containing them, a process for preparing such pharmaceutical compositions, their use in therapy, and intermediates for use in their preparation.

    摘要翻译： 式I的螺环酰胺衍生物，其中ArCH2CH2NH-代表一种β-肾上腺素能受体结合基团，其制备方法，含有它们的药物组合物，制备该药物组合物的方法，它们在治疗中的应用以及用于其制备的中间体。

    SYSTEM AND METHOD OF DATA SHARING
    5.
    发明申请
    SYSTEM AND METHOD OF DATA SHARING 审中-公开
    数据共享的系统和方法

    公开(公告)号：US20120271489A1

    公开(公告)日：2012-10-25

    申请号：US13496659

    申请日：2010-12-21

    申请人： Peter James Roberts ,  Peter Andrew Bailey

    发明人： Peter James Roberts ,  Peter Andrew Bailey

    IPC分类号： G05D1/00 ,  G01C21/00 ,  H04W4/04

    CPC分类号： H04L67/1095 ,  A01B79/005 ,  G05D1/0297 ,  G05D2201/0201 ,  G08G1/207 ,  H04L67/12 ,  H04L67/18

    摘要： Agricultural vehicles are guided to prevent overlap of areas operated on by the vehicles. Guidance data is shared between agricultural vehicles by coverage data of area covered by a first agricultural vehicle being wirelessly transmitted to a central server. Download guidance data is generated at the central server using the coverage data received at the central server. The download guidance data is wirelessly transmitted from the server to a second guidance device of a second agricultural vehicle. The second agricultural vehicle uses the download guidance data to not overlap with area covered by the first agricultural vehicle while operating.

    摘要翻译： 引导农用车辆，以防止车辆操作区域重叠。 指导数据由农用车辆通过被无线发送到中央服务器的第一辆农用车辆覆盖的区域的覆盖数据共享。 在中央服务器使用在中央服务器接收的覆盖数据生成下载指导数据。 下载指导数据从服务器无线发送到第二农用车辆的第二引导装置。 第二农用车辆在使用时使用下载指导数据与第一农用车辆覆盖的区域不重叠。

    Bevel clean device
    6.
    发明授权
    Bevel clean device 有权
    斜角清洁装置

    公开(公告)号：US08137501B2

    公开(公告)日：2012-03-20

    申请号：US11672922

    申请日：2007-02-08

    申请人： Yunsang Kim ,  Andrew Bailey, III ,  Greg Sexton ,  Keechan Kim ,  Andras Kuthi

    发明人： Yunsang Kim ,  Andrew Bailey, III ,  Greg Sexton ,  Keechan Kim ,  Andras Kuthi

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/02087

    摘要： An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.

    摘要翻译： 提供了用于在晶片的斜面上去除材料的设备。 提供直径小于晶片直径的晶片支架，其中所述晶片支撑件位于所述晶片的第一侧上，并且其中所述晶片的外边缘延伸超过所述晶片支撑件围绕所述晶片。 RF电源电连接到晶片。 中心盖与晶片支撑件间隔开。 第一导电环位于晶片的第一侧并与晶片间隔开。 第二导电环与晶片间隔开。 导电衬套围绕晶片的外边缘。 开关在衬垫和接地之间，允许衬管从接地切换到浮动。

    Compounds - 801
    7.
    发明申请
    Compounds - 801 有权
    化合物 - 801

    公开(公告)号：US20110053909A1

    公开(公告)日：2011-03-03

    申请号：US12847000

    申请日：2010-07-30

    申请人： Lilian Alcaraz ,  Andrew Bailey ,  Nicholas Kindon

    发明人： Lilian Alcaraz ,  Andrew Bailey ,  Nicholas Kindon

    IPC分类号： A61K31/5386 ,  C07D498/10 ,  A61P29/00 ,  A61P11/00

    CPC分类号： C07D498/10 ,  C07D519/00

    摘要： Spirocyclic amide derivatives of formula I whereinArCH2CH2NH— represents a β-adrenoceptor binding group, processes for their preparation, pharmaceutical compositions containing them, a process for preparing such pharmaceutical compositions, their use in therapy, and intermediates for use in their preparation.

    摘要翻译： 式I的螺环酰胺衍生物，其中ArCH2CH2NH-代表一种β-肾上腺素能受体结合基团，其制备方法，含有它们的药物组合物，制备该药物组合物的方法，它们在治疗中的应用以及用于其制备的中间体。

    LOW-K DAMAGE AVOIDANCE DURING BEVEL ETCH PROCESSING
    9.
    发明申请
    LOW-K DAMAGE AVOIDANCE DURING BEVEL ETCH PROCESSING 有权
    在水蚀加工中的低K损伤避免

    公开(公告)号：US20100175830A1

    公开(公告)日：2010-07-15

    申请号：US12730146

    申请日：2010-03-23

    申请人： Yunsang KIM ,  Andrew BAILEY, III ,  Jack CHEN

    发明人： Yunsang KIM ,  Andrew BAILEY, III ,  Jack CHEN

    IPC分类号： C23F1/08

    CPC分类号： H01L21/02041 ,  H01L21/02087 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/6833

    摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.

    摘要翻译： 提供了蚀刻基板的斜边缘的方法。 在蚀刻层上形成图案化的光致抗蚀剂掩模。 清洁斜面边缘，包括提供包括CO 2，CO，C x H y，H 2，NH 3，C x H y Fz及其组合中的至少一种的清洁气体，从清洁气体形成清洁等离子体，并将斜面边缘暴露于清洁等离子体 。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。