Invention Application
- Patent Title: Phase-change memory and fabrication method thereof
- Patent Title (中): 相变存储器及其制造方法
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Application No.: US11617977Application Date: 2006-12-29
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Publication No.: US20080157050A1Publication Date: 2008-07-03
- Inventor: Frederick T Chen
- Applicant: Frederick T Chen
- Applicant Address: TW HSINCHU TW HSIN-CHU TW TAOYUAN TW HSINCHU TW HSINCHU
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE,POWERCHIP SEMICONDUCTOR CORP.,NANYA TECHNOLOGY CORPORATION,PROMOS TECHNOLOGIES INC.,WINBOND ELECTRONICS CORP.
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE,POWERCHIP SEMICONDUCTOR CORP.,NANYA TECHNOLOGY CORPORATION,PROMOS TECHNOLOGIES INC.,WINBOND ELECTRONICS CORP.
- Current Assignee Address: TW HSINCHU TW HSIN-CHU TW TAOYUAN TW HSINCHU TW HSINCHU
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L21/306 ; G11C11/00
Abstract:
A phase-change memory and fabrication method thereof. The phase-change memory comprises a transistor, and a phase-change material layer. In particular, the phase-change material layer is directly in contact with one electrical terminal of the transistor. Particularly, the transistor can be a field effect transistor or a bipolar junction transistor.
Public/Granted literature
- US07521372B2 Method of fabrication of phase-change memory Public/Granted day:2009-04-21
Information query
IPC分类:
