发明申请
- 专利标题: Semiconductor device and method of fabricating the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11980632申请日: 2007-10-31
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公开(公告)号: US20080157182A1公开(公告)日: 2008-07-03
- 发明人: Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Won-joo Kim , June-mo Koo , Kyoung-Iae Cho , Jae-Woong Hyun , Sung-jae Byun
- 申请人: Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Won-joo Kim , June-mo Koo , Kyoung-Iae Cho , Jae-Woong Hyun , Sung-jae Byun
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2006-0135005 20061227
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L21/336
摘要:
Example embodiments relate to a semiconductor device including a fin-type channel region and a method of fabricating the same. The semiconductor device includes a semiconductor substrate, a semiconductor pillar and a contact plug. The semiconductor substrate includes at least one pair of fins used (or functioning) as an active region. The semiconductor pillar may be interposed between portions of the fins to connect the fins. The contact plug may be disposed (or formed) on the semiconductor pillar and electrically connected to top surfaces of the fins.
公开/授权文献
- US07829932B2 Semiconductor device 公开/授权日:2010-11-09
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