Non-Volatile Memory Device Having Charge Trapping Layer and Method for Fabricating the Same

Invention Application

US20080157185A1 Non-Volatile Memory Device Having Charge Trapping Layer and Method for Fabricating the Same 有权

Title translation: 具有电荷俘获层的非易失性存储器件及其制造方法

Please log in to see more content

Patent Title: Non-Volatile Memory Device Having Charge Trapping Layer and Method for Fabricating the Same
Patent Title (中): 具有电荷俘获层的非易失性存储器件及其制造方法
Application No.: US11770985

Application Date: 2007-06-29
Publication No.: US20080157185A1

Publication Date: 2008-07-03
Inventor: Moon Sig Joo , Seung Ho Pyi , Yong Soo Kim
Applicant: Moon Sig Joo , Seung Ho Pyi , Yong Soo Kim
Applicant Address: KR Icheon-si
Assignee: Hynix Semiconductor Inc
Current Assignee: Hynix Semiconductor Inc
Current Assignee Address: KR Icheon-si
Priority: KR10-2006-0138825 20061229
Main IPC: H01L29/792
IPC: H01L29/792 ; H01L21/3205

Non-Volatile Memory Device Having Charge Trapping Layer and Method for Fabricating the Same

Abstract:

A non-volatile memory device includes a substrate, a tunneling layer over the substrate, a charge trapping layer including a nitride layer and a silicon boron nitride layer over the tunneling layer, and a blocking layer over the charge trapping layer, and a control gate electrode arranged on the blocking layer.

Abstract(Chinese):

非易失性存储器件包括衬底，衬底上的隧道层，在隧穿层上方包括氮化物层和氮化硼氮化物层的电荷俘获层，以及电荷俘获层上的阻挡层，以及控制栅极电极布置在阻挡层上。

Public/Granted literature

US07948025B2 Non-volatile memory device having charge trapping layer and method for fabricating the same Public/Granted day:2011-05-24

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/792	......带有电荷捕获栅绝缘体，例如MNOS存储晶体管