发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US11965840申请日: 2007-12-28
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公开(公告)号: US20080157279A1公开(公告)日: 2008-07-03
- 发明人: Mitsuhiro HORIKAWA
- 申请人: Mitsuhiro HORIKAWA
- 申请人地址: JP Tokyo
- 专利权人: ELPIDA MEMORY, INC.
- 当前专利权人: ELPIDA MEMORY, INC.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-355441 20061228
- 主分类号: H01L29/92
- IPC分类号: H01L29/92 ; H01L21/02
摘要:
Disclosed is a method of manufacturing a semiconductor device formed by laminating a capacitor including a bottom metal electrode, a capacitive insulating film, and an upper metal electrode. When the capacitive insulating film is formed by performing a first step of forming a first dielectric layer on the bottom metal electrode by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric; and a second step of forming a second dielectric layer on the first dielectric layer by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric, a film forming temperature in the first step is set so as to be lower than a film forming temperature in the second step.
公开/授权文献
- US08026184B2 Semiconductor device and method of manufacturing the same 公开/授权日:2011-09-27